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MPC7410EC データシート(PDF) 11 Page - NXP Semiconductors |
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MPC7410EC データシート(HTML) 11 Page - NXP Semiconductors |
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11 / 56 page ![]() MPC7410 RISC Microprocessor Hardware Specifications, Rev. 6.1 Freescale Semiconductor 11 Electrical and Thermal Characteristics Table 5 provides the DC electrical characteristics for the MPC7410. Junction-to-case thermal resistance RθJC < 0.1 < 0.1 °C/W 4 Notes: 1. Junction temperature is a function of die size, on-chip power dissipation, package thermal resistance, mounting site (board) temperature, ambient temperature, air flow, power dissipation of other components on the board, and board thermal resistance. 2. Per JEDEC JESD51-6 with the board horizontal. 3. Thermal resistance between the die and the printed circuit board per JEDEC JESD51-8. Board temperature is measured on the top surface of the board near the package. 4. Thermal resistance between the active portion of the die and the calculated case temperature at the top of the die. The actual value of R JC is less than 0.1 °C/W. Note: Refer to Section 8.8, “Thermal Management Information,” for details on thermal management. Table 5. DC Electrical Specifications At recommended operating conditions (see Table 3) Characteristic Nominal Bus Voltage1 Symbol Min Max Unit Notes Input high voltage (all inputs except SYSCLK) 1.8 VIH 0.65 × (L2)OVDD (L2)OVDD + 0.2 V 2, 3, 8 2.5 VIH 1.7 (L2)OVDD + 0.2 3.3 VIH 2.0 OVDD + 0.3 Input low voltage (all inputs except SYSCLK) 1.8 VIL –0.3 0.35 × (L2)OVDD V8 2.5 VIL –0.3 0.2 × (L2)OVDD 3.3 VIL –0.3 0.8 SYSCLK input high voltage 1.8 CVIH 1.5 OVDD + 0.2 V 2, 8 2.5 CVIH 2.0 OVDD + 0.2 3.3 CVIH 2.4 OVDD + 0.3 SYSCLK input low voltage 1.8 CVIL –0.3 0.2 V 8 2.5 CVIL –0.3 0.4 3.3 CVIL –0.3 0.4 Input leakage current, Vin = L2OVDD/OVDD 1.8 Iin —20 µA 2, 3, 6, 7 2.5 Iin —35 3.3 Iin —70 Table 4. Package Thermal Characteristics (continued) Characteristic Symbol Value Unit Notes MPC7410 CBGA MPC7410 HCTE |
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