MBT3904T datasheet(3/10 Pages) AITSEMI

3 / 10 page

AiT Semiconductor Inc.

www.ait-ic.com

MBT3904T

SWITCHING TRANSISTOR

NPN TRANSISTOR

REV1.0

- MAY 2017 RELEASED -

- 3 -

ELECTRICAL CHARACTERISTICS

TA = 25°C, unless otherwise noted

Parameter

Symbol

Conditions

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown

VoltageNOTE3

V (BR)CEO IC = 1.0mAdc

Vdc

Collector–Base Breakdown Voltage

V(BR)CBO IC = 10μAdc

Vdc

Emitter-Base Breakdown Voltage

V(BR)EBO

IE = 10μAdc

6.0

Vdc

Base Cutoff Current

IBL

VCE = 30Vdc, VEB = 3.0Vdc

nAdc

Collector Cutoff Current

ICEX

VCE = 30Vdc, VEB = 3.0Vdc

nAdc

ON CHARACTERISTICSNOTE3

DC Current GainNOTE1

hFE

IC = 0.1mAdc, VCE = 1.0Vdc

IC = 1.0mAdc, VCE = 1.0Vdc

IC = 10mAdc, VCE = 1.0Vdc

100

300

IC = 50mAdc, VCE = 1.0Vdc

IC = 100mAdc, VCE = 1.0Vdc

Collector–Emitter Saturation

Voltage

VCE(sat)

IC = 10mAdc, IB = 1.0mAdc

NOTE3

0.2

Vdc

IC = 50mAdc,IB = 5.0mAdc

0.3

Base–Emitter Saturation Voltage

NOTE3

VBE(sat)

IC = 10mAdc,IB = 1.0mAdc

0.65

0.85

Vdc

IC = 50mAdc, IB = 5.0mAdc

0.95

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