MBT3904T datasheet(2/10 Pages) AITSEMI

2 / 10 page

AiT Semiconductor Inc.

www.ait-ic.com

MBT3904T

SWITCHING TRANSISTOR

NPN TRANSISTOR

REV1.0

- MAY 2017 RELEASED -

- 2 -

ABSOLUTE MAXIMUM RATINGS

Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at

these or any other conditions beyond those indicated in the Electrical Characteristics are not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

THERMAL CHARACTERISTICS

VCEO, Collector-Emitter Voltage

40Vdc

VCBO , Collector-Base Voltage

60Vdc

VEBO, Emitter-Base Voltage

6.0Vdc

IC, Collector Current-Continuous

200mAdc

Parameter

Symbol

Max

Unit

Total Device Dissipation FR– 4 Board,NOTE1

TA = 25°C

Derate above 25°C

200

1.6

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

600

°C/W

Total Device Dissipation FR-4 Board, NOTE2

TA = 25°C

Derate above 25°C

300

2.4

mW/°C

Thermal Resistance, Junction to Ambient

RθJA

400

°C/W

Junction and Storage Temperature

TJ, TSTG

-55 to +150

°C

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