SST25WF080B datasheet(1/44 Pages) MICROCHIP

部品番号	SST25WF080B

部品情報	8-Mbit, 1.8V, SPI Serial Flash

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メーカー	MICROCHIP [Microchip Technology]

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 2013-2022 Microchip Technology Inc. and its subsidiaries

DS20005164H-page 1

SST25WF080B

Features

• Single Voltage Read and Write Operations

- 1.65V-1.95V

• Serial Interface Architecture

- SPI Compatible: Mode 0 and Mode 3

• High-Speed Clock Frequency

-40 MHz

• Dual Input/Output Support

- Fast-Read Dual-Output Instruction (3BH)

- Fast-Read Dual I/O Instruction (BBH)

• Superior Reliability

- Endurance: 100,000 Cycles

- Greater than 20 years Data Retention

• Ultra-Low Power Consumption:

- Active Read current: 4 mA (typical)

- Standby current: 7 µA (typical)

- Deep Power-down current: 2 µA (typical)

• Flexible Erase Capability

- Uniform 4-Kbyte sectors

- Uniform 64-Kbyte overlay blocks

• Page Program Mode

- 256 bytes/Page

• Fast Erase and Page-Program:

- Chip Erase time: 500 ms (typical)

- Sector Erase time: 40 ms (typical)

- Block Erase time: 80 ms (typical)

- Page Program time: 0.8 ms/ 256 bytes (typical)

• End-of-Write Detection

- Software polling the BUSY bit in STATUS Regis-

ter

• Hold Pin (HOLD#)

- Suspend a serial sequence without

deselecting the device

• Write Protection (WP#)

- Enables/Disables the Lock-Down function of

the STATUS register

• Software Write Protection

- Write protection through Block-Protection bits

in STATUS register

• Temperature Range

- Industrial: -40°C to +85°C

- Extended: -40°C to +125°C

- AECQ-100 Qualified

• All devices are RoHS compliant

Packages

• 8-lead SOIC (150 mils)

• 8-contact USON (2 mm x 3 mm)

Product Description

SST25WF080B is a member of the Serial Flash 25

Series family and feature a four-wire, SPI-compatible

interface that allows for a low pin-count package which

occupies less board space and ultimately lowers total

system costs. SPI serial flash memory is manufactured

with

proprietary,

high-performance

CMOS

SuperFlash® technology. The split-gate cell design and

thick-oxide tunneling injector attain better reliability and

manufacturability compared with alternate approaches.

This Serial Flash significantly improve performance

and reliability, while lowering power consumption. The

device writes (Program or Erase) with a single power

supply of 1.65V-1.95V. The total energy consumed is a

function of the applied voltage, current, and time of

application. Since for any given voltage range, the

SuperFlash technology uses less current to program

and has a shorter erase time, the total energy con-

sumed during any Erase or Program operation is less

than alternative flash memory technologies.

See Figure 2-1 for the pin assignments.

8-Mbit, 1.8V, SPI Serial Flash

同様の部品番号 - SST25WF080B

メーカー	部品番号	データシート	部品情報
Microchip Technology	SST25WF080B	726Kb / 39P	8 Mbit 1.8V SPI Serial Flash 2014
	SST25WF080B-40I/SN	726Kb / 39P	8 Mbit 1.8V SPI Serial Flash 2014
	SST25WF080BT-40I/NP	726Kb / 39P	8 Mbit 1.8V SPI Serial Flash 2014
	SST25WF080BT-40I/SN	726Kb / 39P	8 Mbit 1.8V SPI Serial Flash 2014

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同様の説明 - SST25WF080B

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