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SST25WF080B データシート(PDF) 16 Page - Microchip Technology |
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SST25WF080B データシート(HTML) 16 Page - Microchip Technology |
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16 / 44 page ![]() SST25WF080B DS20005164H-page 16 2013-2022 Microchip Technology Inc. and its subsidiaries 5.8 Chip Erase The Chip Erase instruction clears all bits in the device to FFH. A Chip Erase instruction is ignored if any of the memory area is protected. Prior to any write operation, the Write Enable (WREN) instruction must be executed. CE# must remain active-low for the duration of the Chip Erase instruction sequence. Initiate the Chip Erase instruction by executing an 8-bit command, 60H or C7H. CE# must be driven high before the instruction is exe- cuted. Poll the BUSY bit in the Software STATUS regis- ter, or wait TSCE, for the completion of the internal self- timed Chip Erase cycle. See Figure 5-8 for the Chip Erase sequence and Figure 6-10 for the flow chart. FIGURE 5-8: CHIP ERASE SEQUENCE 5.9 Read STATUS Register (RDSR) The Read STATUS Register (RDSR) instruction, 05H, allows reading of the STATUS register. The STATUS register may be read at any time even during a write (program/erase) operation. When a write operation is in progress, the BUSY bit may be checked before send- ing any new commands to assure that the new com- mands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. Read STA- TUS Register is continuous with ongoing clock cycles until it is terminated by a low-to-high transition of the CE#. See Figure 5-9 for the RDSR instruction sequence. FIGURE 5-9: READ STATUS REGISTER (RDSR) SEQUENCE CE# SO SI SCK 0 1 234 5 6 7 60 or C7 High-Impedance MODE 0 MODE 3 MSb 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 MODE 3 SCK SI SO CE# Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 05 MODE 0 High-Impedance STATUS Register Out MSb MSb |
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