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SST25WF080B データシート(PDF) 16 Page - Microchip Technology

部品番号 SST25WF080B
部品情報  8-Mbit, 1.8V, SPI Serial Flash
PDF  44 Pages
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メーカー  MICROCHIP [Microchip Technology]
ホームページ  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST25WF080B データシート(HTML) 16 Page - Microchip Technology

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SST25WF080B
DS20005164H-page 16
 2013-2022 Microchip Technology Inc. and its subsidiaries
5.8
Chip Erase
The Chip Erase instruction clears all bits in the device
to FFH. A Chip Erase instruction is ignored if any of the
memory area is protected. Prior to any write operation, the
Write Enable (WREN) instruction must be executed. CE#
must remain active-low for the duration of the Chip
Erase instruction sequence. Initiate the Chip Erase
instruction by executing an 8-bit command, 60H or
C7H. CE# must be driven high before the instruction is exe-
cuted. Poll the BUSY bit in the Software STATUS regis-
ter, or wait TSCE, for the completion of the internal self-
timed Chip Erase cycle. See Figure 5-8 for the Chip
Erase sequence and Figure 6-10 for the flow chart.
FIGURE 5-8:
CHIP ERASE SEQUENCE
5.9
Read STATUS Register (RDSR)
The Read STATUS Register (RDSR) instruction, 05H,
allows reading of the STATUS register. The STATUS
register may be read at any time even during a write
(program/erase) operation. When a write operation is in
progress, the BUSY bit may be checked before send-
ing any new commands to assure that the new com-
mands are properly received by the device. CE# must
be driven low before the RDSR instruction is entered
and remain low until the status data is read. Read STA-
TUS Register is continuous with ongoing clock cycles
until it is terminated by a low-to-high transition of the
CE#. See Figure 5-9 for the RDSR instruction
sequence.
FIGURE 5-9:
READ STATUS REGISTER (RDSR) SEQUENCE
CE#
SO
SI
SCK
0 1 234 5 6 7
60 or C7
High-Impedance
MODE 0
MODE 3
MSb
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
MODE 3
SCK
SI
SO
CE#
Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0
05
MODE 0
High-Impedance
STATUS
Register Out
MSb
MSb



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