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L9945 データシート(PDF) 25 Page - STMicroelectronics

部品番号 L9945
部品情報  Automotive fully configurable 8-channel High/Low side MOSFET pre-driver suitable for 12 V and 24 V systems
PDF  144 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L9945 データシート(HTML) 25 Page - STMicroelectronics

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Figure 12. Output pre-driver control
CM
IPU
IPD
CM
IPU
IPD
VGBHI
NFET ou
Ratings: CM = 50 V for 12 V systems, 100 V for 24 V and 48 V systems.
tput control
NONx = 0
or
SPI_ON_OUTxx = 1
NONx = 1
or
SPI_ON_OUTxx = 0
To load
or
battery
To load
or
ground
To load
VPS
RPU
NONx = 1
or
SPI_ON_OUTxx = 0
NONx = 0
or
SPI_ON_OUTxx = 1
PFET output control
RG
RG
GADG2702171056PS
The pull up/pull down currents can be programmed via SPI through the GCC_config_xx bit, as shown in the table
below:
Table 14. Selection of gate charge/discharge currents
GCC_config_xx
IPU / IPD [mA]
00
Limited by external resistor (RG)
Internally clamped to ICh0Gx/IDCh0Gx
01
20
10
5
11
1
In case GCC_config_xx is programmed "0b00", an external resistor RG is required for protecting the transistor
gate against excessive current: the resistor must be mounted in series on the IPU / IPD path, as shown in
Figure 12. However, to prevent charge pump stress, the device internally limits the maximum charge/discharge
current to ICh0Gx/IDCh0Gx (refer to Table 15).
External measures have to be taken to keep the external MOS reliably OFF in case of output three-state. For
external NMOS a gate pull down resistor RPD is needed and for external PMOS a gate pull up resistor RPU is
necessary (refer to Figure 12).
In order to improve EMI behavior, an external Miller capacitor CM can be mounted between transistor gate and
drain. Value of this capacitor depends on:
The switching frequency required by the application;
The programmed charge/discharge current.
The AN "How To Improve EMI Behavior In Switching Applications" provides a guideline for CM selection. It also
helps choosing the right value for IPU/IPD in order to reduce EMI.
5.4.5
Internal and external clamping
The device guarantees a maximum gate to source voltage of 20 V by means of an internal clamping circuitry
which limits the overdrive. However, such a clamp is not intended as a protection against external spikes or
failures (STB/STG).
L9945
Functional description
DS12275 - Rev 10
page 25/144



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