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A8732 データシート(PDF) 5 Page - Allegro MicroSystems |
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A8732 データシート(HTML) 5 Page - Allegro MicroSystems |
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5 / 20 page ![]() Ultra Small Mobile Phone Xenon Photoflash Capacitor Charger with IGBT Driver 5 Allegro MicroSystems, Inc. 115 Northeast Cutoff Worcester, Massachusetts 01615-0036 U.S.A. 1.508.853.5000; www.allegromicro.com A8732 Switch On-Resistance RSWDS(on) VIN_DRV = 3.6 V, ID = 600 mA, TA = 25°C – 0.4 – Ω Switch Leakage Current ISWLK VSW = 5.5, over full temperature range (note 1) – – 2 μA CHARGE Pull-down Resistance RCHGPD – 100 – kΩ CHARGE Input Voltage VCHARGE High, over input supply range (note 1) 1.0 – – V Low, over input supply range (note 1) – – 0.4 V Charge Pin Programming ILIM Programming High at CHARGE Pin tILIM(H)init Initial Pulse (note 3) 15 – – μs tILIM(H) Subsequent Pulses (note 3) 0.2 – – μs ILIM Programming Low at CHARGE Pin tILIM(L) (note 3) 0.2 – – μs Total ILIM Setup Time at CHARGE Pin tILIM(SU) (note 3) – 200 – μs Switch-Off Timeout toff(max) – 18 – μs Switch-On Timeout ton(max) – 18 – μs Output Comparator Trip Voltage VOUTTRIP Measured as VSW – VBAT (note 4) 31 31.5 32 V Output Comparator Voltage Overdrive VOUTOV Pulse width = 200 ns (90% to 90%) – 200 400 mV ¯D¯¯O¯¯N¯¯E¯ Leakage Current IDONELK (note 1) 1 μA ¯D¯¯O¯¯N¯¯E¯ Output Low Voltage VDONEL 32 μA into ¯D¯¯O¯¯N¯¯E¯ pin (note 1) – – 100 mV dV/dt Threshold for ZVS Comparator dV/dt Measured at SW pin – 20 – V/μs IGBT Driver TRIG Input Voltage VTRIG(H) Input = logic high, over input supply range (note 1) 1.0 – – V VTRIG(L) Input = logic low, over input supply range (note 1) – – 0.4 V TRIG Pull-Down Resistor RTRIGPD – 100 – kΩ GATE Resistance to VIN_DRV RSrcDS(on) VGATE = 1.8 V – 21 – Ω GATE Resistance to GND RSnkDS(on) VGATE = 1.8 V – 27 – Ω Propagation Delay (Rising) tDr Measurement taken at GATE pin, CL= 6500 pF (notes 3, 5) – 25 – ns Propagation Delay (Falling) tDf (notes 3, 5) – 60 – ns Output Rise Time tr (notes 3, 5) – 290 – ns Output Fall Time tf (notes 3, 5) – 380 – ns GATE Pull-Down Resistor RGTPD – 20 – kΩ 1 Specifications throughout the range TA = –40°C to 85°C guaranteed by design and characterization. 2Current limit guaranteed by design and correlation to static test. 3Guaranteed by design and characterization. 4Specifications throughout the range TA = –20°C to 85°C guaranteed by design and characterization. 5See IGBT Drive Timing Definition diagram for further information. ELECTRICAL CHARACTERISTICS (Continued) Typical values are valid at VIN = VBAT = 3.6 V; TA = 25°C, except indicates specifications guaranteed from −40°C to 85°C ambient, unless otherwise noted |
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