STCOM10 datasheet(54/58 Pages) STMICROELECTRONICS

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Electrical characteristics

STCOM

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DocID028515 Rev 1

4.5

Embedded Flash characteristics

Table 30. Flash memory characteristics

Symbol

Parameter(1)

Conditions

Min. Typ.(2) Max.(3) Max.(4) Unit

tDWPRG Double word program

Not including SW overhead

500

s

tMPRG Module program (512 kB)

Not including SW overhead

1.3

1.65

tBKPRG Bank program (1056 KB)

Not including SW overhead

2.6

6.6

tER16K Sector pre-program and erase (16 KB)

0.2

0.5

5.0

tER32K Sector pre-program and erase (32 KB)

0.3

0.6

5.0

tER64K Sector pre-program and erase (64 KB)

0.4

0.9

5.0

tER128K Sector pre-program and erase (128 KB)

0.6

1.3

5.0

tMKER Module erase (512 KB)

4.8

7.6

tBKER Bank erase (1056 KB)

12.6

tPABT Program abort latency

s

tEABT Erase abort latency

s

tESUS Erase suspend latency

s

tESRT Erase suspend request rate

1. Based on characterization, not tested in production.

2. Assuming nominal supply values and operation at 25 °C, 0 cycles.

3. Assuming nominal supply values and operation at 25 °C, 100 cycles.

4. Assuming nominal supply values and operation at 125 °C, 100 Kcycles.

Table 31. Flash memory endurance and data retention

Symbol

Parameter

Conditions

Min.(1)

Typ.

Max.

Unit

NEND

Endurance

TA = -40 to +85 °C

1 K

Cycles

tRET

Data retention

1 kcycle at TA = +85 °C(2)

Years

1 kcycles(2) at TA = +55 °C (see(2))

Years

1. Based on characterization, not tested in production.

2. Cycling performed over the whole temperature range.

Table 32. Flash memory current consumption

Symbol

Parameter

Conditions

Min. Typ. Max. Unit

I(Flash_VDD3V3)

Current consumption from 3.3 V

supply source

During the erase of all the sectors -

see(1)

1.6

I(Flash_VDD1V2)

Current consumption from 1.2 V

supply source

During the erase of all the sectors(1)

12.3

1. During characterization, not tested in production. The values exclude the consumption from other pins.

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