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STM32L063C8 データシート(PDF) 58 Page - STMicroelectronics

部品番号 STM32L063C8
部品情報  Ultra-low-power platform
PDF  121 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32L063C8 データシート(HTML) 58 Page - STMicroelectronics

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Electrical characteristics
STM32L063x8
58/121
DocID025660 Rev 6
6.3.4
Supply current characteristics
The current consumption is a function of several parameters and factors such as the
operating voltage, temperature, I/O pin loading, device software configuration, operating
frequencies, I/O pin switching rate, program location in memory and executed binary code.
The current consumption is measured as described in Figure 10: Current consumption
measurement scheme.
All Run-mode current consumption measurements given in this section are performed with a
reduced code that gives a consumption equivalent to Dhrystone 2.1 code if not specified
otherwise.
The current consumption values are derived from the tests performed under ambient
temperature and VDD supply voltage conditions summarized in Table 24: General operating
conditions unless otherwise specified.
The MCU is placed under the following conditions:
All I/O pins are configured in analog input mode
All peripherals are disabled except when explicitly mentioned
The Flash memory access time and prefetch is adjusted depending on fHCLK
frequency and voltage range to provide the best CPU performance unless otherwise
specified.
When the peripherals are enabled fAPB1 = fAPB2 = fAPB
When PLL is on, the PLL inputs are equal to HSI = 16 MHz (if internal clock is used) or
HSE = 16 MHz (if HSE bypass mode is used)
The HSE user clock applied to OSCI_IN input follows the characteristic specified in
Table 41: High-speed external user clock characteristics
For maximum current consumption VDD = VDDA = 3.6 V is applied to all supply pins
For typical current consumption VDD = VDDA = 3.0 V is applied to all supply pins if not
specified otherwise
The parameters given in Table 49, Table 24 and Table 25 are derived from tests performed
under ambient temperature and VDD supply voltage conditions summarized in Table 24.
ILPBUF(4)
Consumption of reference
voltage buffer for VREF_OUT
and COMP
-
-
730
1200
nA
VREFINT_DIV1(4) 1/4 reference voltage
-
24
25
26
%
VREFINT
VREFINT_DIV2(4) 1/2 reference voltage
-
49
50
51
VREFINT_DIV3(4) 3/4 reference voltage
-
74
75
76
1. Refer to Table 39: Peripheral current consumption in Stop and Standby mode for the value of the internal reference current
consumption (IREFINT).
2. Guaranteed by test in production.
3. The internal VREF value is individually measured in production and stored in dedicated EEPROM bytes.
4. Guaranteed by design.
5. Shortest sampling time can be determined in the application by multiple iterations.
6. To guarantee less than 1% VREF_OUT deviation.
Table 27. Embedded internal reference voltage(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit



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