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AS4C64M8D2 データシート(PDF) 13 Page - Alliance Semiconductor Corporation

部品番号 AS4C64M8D2
部品情報  Fully synchronous operation
PDF  59 Pages
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メーカー  ALSC [Alliance Semiconductor Corporation]
ホームページ  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C64M8D2 データシート(HTML) 13 Page - Alliance Semiconductor Corporation

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AS4C64M8D2
Confidential
13
Rev. 1.0
Feb. /2014
 ODT (On Die Termination)
On Die Termination (ODT) is a feature that allows a DRAM to turn on/off termination resistance for each DQ,
DQS/DQS#, DM signal via the ODT control pin. The ODT feature is designed to improve signal integrity of the
memory channel by allowing the DRAM controller to independently turn on/off termination resistance for any or all
DRAM devices.
The ODT function is supported for ACTIVE and STANDBY modes. It is turned off and not supported in SELF
REFRESH mode.
Figure 4. Functional representation of ODT
SW1
Rval1
VDDQ
SW1
Rval1
VSSQ
SW3
Rval3
VDDQ
SW3
Rval3
VSSQ
SW2
Rval2
VDDQ
SW2
Rval2
VSSQ
Input
pin
DRAM
Input
Buffer
Switch (sw1, sw2, sw3) is enabled by ODT pin.
Selection among sw1, sw2, and sw3 is determined by “Rtt (nominal)” in EMR.
Termination included on all DQs, DM, DQS, DQS# pins
Table 9. ODT DC Electrical Characteristics
Parameter/Condition
Symbol
Min.
Nom.
Max.
Unit Note
Rtt effective impedance value for EMRS(A6,A2)=0,1;75Ω
Rtt1(eff)
60
75
90
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,0;150Ω Rtt2(eff)
120
150
180
Ω
1
Rtt effective impedance value for EMRS(A6,A2)=1,1;50Ω
Rtt3(eff)
40
50
60
Ω
1
Rtt mismatch tolerance between any pull-up/pull-down pair
Rtt(mis)
-6
-
6
%
2
NOTE 1: Measurement Definition for Rtt(eff):
Apply VIH (ac) and VIL (ac) to test pin separately, then measure current I(VIH(ac)) and I(VIL(ac)) respectively.
( )
( )
IH
IL
IH
IL
V ac
V ac
Rtt(eff)=
I(V (ac))-I(V (ac))
NOTE 2: Measurement Definition for Rtt (mis): Measure voltage (VM) at test pin (midpoint) with no load.
1 100%




DDQ
2xVM
Rtt(mis)=
V



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