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NCV8445 データシート(PDF) 3 Page - ON Semiconductor

部品番号 NCV8445
部品情報  Self Protected High Side Driver
PDF  16 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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NCV8445 データシート(HTML) 3 Page - ON Semiconductor

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NCV8445
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MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Min
Max
DC Supply Voltage
VD
−0.3
42
V
Peak Transient Input Voltage
(Load Dump 42.5 V, VD = 13.5 V, RLOAD = 6.5 W, ISO7637−2 pulse 5)
Vpeak
56
V
Input Voltage
Vin
−8
8
V
Input Current
Iin
−5
5
mA
Output Current (Note 1)
Iout
−6
Internally
Limited
A
Negative Ground Current
−Ignd
−200
mA
Status Current
Istatus
−5
5
mA
Power Dissipation, Tc = 25
°C
Ptot
1.183
W
Electrostatic Discharge
(HBM Model 100 pF / 1500
W)
Input
Status
Output
VD
4
3.5
5
5
DC
kV
kV
kV
kV
Single Pulse Inductive Load Switching Energy (Note 2)
(L = 1.8 mH, Vbat = 13.5 V; IL = 8.75 A, TJstart = 150°C)
EAS
101.5
mJ
Operating Junction Temperature
TJ
−40
+150
°C
Storage Temperature
Tstorage
−55
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance.
2. Not subjected to production testing.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max Value
Unit
Thermal Resistance
Junction−to−Lead
Junction−to−Ambient (min. Pad)
Junction−to−Ambient (1” square pad size, FR−4, 1 oz Cu)
RqJL
RqJA
RqJA
72
110.8
105.6
°C/W
°C/W
°C/W



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