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L9945 データシート(PDF) 30 Page - STMicroelectronics |
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L9945 データシート(HTML) 30 Page - STMicroelectronics |
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30 / 151 page  Figure 15. H-bridge driving configurations GAPG0102161245CFT M GND Rshunt M GND Q1 Q3 Rshunt GND Q4 Rshunt OFF OFF OFF OFF (Active) Freewheeling low-side (forward) (Active) Freewheeling low-side (reverse) High impedance NPWM = ‘x’; DIR = ‘x’; HBx_AFW=’x’; HiZ=’1' Out1(HB+) CH3 CH1 CH3_OC Q3 Q1 M Out2(HB-) CH4_OC CH4 CH2 Q2 Out1(HB+) CH3_OC CH3 CH1 Q4 Q2 Out2(HB-) CH4 CH2 CH4_OC HBx_AFW=’0' -> Freewheel through Q3 diode HBx_AFW=’1' -> Freewheel through Q3 MOSFET NPWM = ‘1’; DIR = ‘0’; HiZ=’0' HBx_AFW=’0' -> Freewheel through Q3 diode HBx_AFW=’1' -> Freewheel through Q3 MOSFET NPWM = ‘1’; DIR = ‘1’; HiZ=’0' Out1(HB+) CH3_OC CH3 CH1 Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 M GND Rshunt M GND Rshunt Out1(HB+) CH3 CH1 CH3_OC Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 Out1(HB+) CH3_OC CH3 CH1 Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 NPWM = ‘0’; DIR = ‘0’; HBx_AFW=’x’; HiZ=’0' NPWM = ‘0’; DIR = ‘1’; HBx_AFW=’x’; HiZ=’0' VBR Rshunt VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC 5.5.2 H-Bridge diagnostics H-bridge status can be monitored by reading each channel diagnostic as if they operated independently (refer to Section 6.2 Diagnostics overview). However, different OC sensing strategies can be implemented, as discussed in Overcurrent detection. While in H-Bridge configuration, an extended set of values is available for OFF state diagnostic timer (tDIAG), as shown in H-Bridge OFF state diagnostic timings. 5.5.3 H-bridge dead time To prevent shoot-through (e.g. Q1 and Q3 ON) it's possible to choose different dead time values for both H- bridges independently. Such parameters are selectable via SPI through the HBx_dead_time bit according to the following table. L9945 H-Bridge DS12275 - Rev 8 page 30/151 |
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