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RMLD232UAW データシート(PDF) 21 Page - Emerging Memory & Logic Solutions Inc |
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RMLD232UAW データシート(HTML) 21 Page - Emerging Memory & Logic Solutions Inc |
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21 / 50 page ![]() 21 Rev 0.7 64Mb Low Power DDR SDRAM Advanced Write with Auto Precharge If A10 is high when write command is issued , the write with auto-precharge function is performed. Any new command to the same bank should not be issued until the internal precharge is completed. The internal precharge begins after keeping tWP(min). *NOTE : 1. The row active command of the precharge bank can be issued after tRP from this point. The new read/write command of other activated bank can be issued from this point. At burst read/write with auto precharge, CAS interrupt of the same bank is illegal. 0 1 2 3 4 5 6 7 8 9 10 11 CK CK NOP WRITE A NOP NOP DQS DQs Figure.15 Write with auto precharge timing NOP BANK A NOP NOP NOP NOP NOP NOP ACTIVE Auto Precharge Din 0 Din 1 Din 2 Din 3 tRP *Bank can be reactivated at completion of tRP Internal precharge starts*1 tWR < Burst Length=4 > Command |
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