STW4811MBRATSLASHHF datasheet(56/85 Pages) STMICROELECTRONICS

56 / 85 page

Electrical and timing characteristics

STw4811M/STw4811N

56/85

CD00131784

Electrical and timing characteristics

Otherwise specified typical parameters are defined for T = 25 °C / VBAT = 3.6 V.

5.1

Absolute maximum rating

5.2

Package dissipation

5.3

Power supply

Note:

STw4811 has different ways to go in sleep mode.

The different possibilities for VCORE, VIO_VMEM and VAUX to be programmed to sleep

mode are given in

Table 26 and Table 27.

Taking in account the bit programming from

Table 26 and Table 27, sleep mode is

summarized with the following formula:

SLEEP = (Vxxx_SLEEP x PWREN) + (Vxxx_FORCE_SLEEP) = 1

(Vxx = VCORE or VIO_VMEM or VAUX)

Table 35.

STw4811 absolute maximum ratings

Symbol

Description

Values

Units

Maximum power supply

-0.5 to 7

Maximum operating ambient temperature

-30 to +85

°C

VESD

Electrostatic discharge model

Human body model(1)

HBM tests have been performed in compliance with JESD22-A114-B and ESD STM 5.1-2001.HBM

-2 to +2

Charge device

model(2)

CDM tests have been performed in compliance with CDM ANSI-ESD STM 5.3.1-1999

-300 to +1000

Table 36.

Package dissipation

Symbol

Description

Min.

Typ.

Max.

Units

TFBGA 84 6x6x1.2mm 0.5mm ball pitch

RTHJ-A

Thermal resistance junction to ambient

°C/W

VFBGA84 4.6x4.6x1.0mm 0.4mm ball pitch

RTHJ-A

Thermal resistance junction to ambient

°C/W

STW4811MBRAT/HF データシート(PDF) 56 Page - STMicroelectronics

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