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L99DZ120 データシート(PDF) 20 Page - STMicroelectronics |
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L99DZ120 データシート(HTML) 20 Page - STMicroelectronics |
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20 / 162 page ![]() Electrical specifications L99DZ120 20/162 DocID029145 Rev 4 Note: Loss of ground or ground shift with externally grounded loads: ESD structures are configured for nominal currents only. If external loads are connected to different grounds, the current load must be limited to this nominal current. 3.2 ESD protection 3.3 Thermal data All parameters are guaranteed in the junction temperature range -40 to 150°C (unless otherwise specified); the device is still operative and functional at higher temperatures (up to 175°C). Note: Parameters limits at higher junction temperatures than 150°C may change respect to what is specified as per the standard temperature range. Note: Device functionality at high junction temperature is guaranteed by characterization. Table 3. ESD protection Parameter Value Unit All pins(1) 1. HBM (human body model, 100 pF, 1.5 kΩ) according to MIL 883C, Method 3015.7 or EIA/JESD22A114-A. +/-2 kV All power output pins (2): OUT1 – OUT15, OUT_HS +/-4 kV LIN +/-8(2) +/-10(3) +/-6(4) 2. HBM with all none zapped pins grounded. 3. Indirect ESD Test according to IEC 61000-4-2 (150 pF, 330 Ω) and ‘Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications’ (version 1.3, 2012-05-04). 4. Direct ESD Test according to IEC 61000-4-2 (150 pF, 330 Ω) and ‘Hardware Requirements for LIN, CAN and Flexray Interfaces in Automotive Applications’ (version 1.3, 2012-05-04). kV All pins(5) 5. Charged device model. +/-500 V Corner pins(5) +/-750(6) 6. For WU, these limits are referred to one-zap stress; in case of three-zap stress, the limits are +750V/-400V. V All pins(7) 7. Machine model; C = 220 pF, R = 0 Ω. +/- 200 V Table 4. Operating junction temperature Symbol Parameter Value Unit Tj Operating junction temperature -40 to 175 °C |
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