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FDMF5821 データシート(PDF) 7 Page - ON Semiconductor |
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FDMF5821 データシート(HTML) 7 Page - ON Semiconductor |
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7 / 26 page  © 2016 Semiconductor Components Industries, LLC www.onsemi.com FDMF5821 • Rev. 1.0 6 Electrical Characteristics Typical value is under VIN=12 V, VCC=PVCC=5 V and TA=TJ=+ 25°C unless otherwise noted. Minimum / Maximum values are under VIN=12 V, VCC=PVCC=5 V ± 10% and TJ=TA=-40 ~ 125°C unless otherwise noted. Symbol Parameter Condition Min. Typ. Max. Unit tD_DEADON LS Off to HS On Dead Time GL Going LOW to GH Going HIGH, 10% GL to 10% GH, PWM Transition LOW to HIGH – See Figure 27 10 ns tD_DEADOFF HS Off to LS On Dead Time GH Going LOW to GL Going HIGH, 10% GH to 10% GL, PWM Transition HIGH to LOW – See Figure 27 5 ns tR_GH_20A GH Rise Time under 20 A IOUT 10% GH to 90% GH, IOUT=20 A 9 ns tF_GH_20A GH Fall Time under 20 A IOUT 90% GH to 10% GH, IOUT=20 A 9 ns tR_GL_20A GL Rise Time under 20 A IOUT 10% GL to 90% GL, IOUT=20 A 9 ns tF_GL_20A GL Fall Time under 20 A IOUT 90% GL to 10% GL, IOUT=20 A 6 ns tPD_TSGHH Exiting 3-State Propagation Delay PWM (from 3-State) Going HIGH to GH Going HIGH, VIH_PWM to 10% GH 45 ns tPD_TSGLH Exiting 3-State Propagation Delay PWM (from 3-State) Going LOW to GL Going HIGH, VIL_PWM to 10% GL 45 ns High-Side Driver (HDRV, VCC = PVCC = 5 V) RSOURCE_GH Output Impedance, Sourcing Source Current=100 mA 0.68 Ω RSINK_GH Output Impedance, Sinking Sink Current=100 mA 0.9 Ω tR_GH GH Rise Time 10% GH to 90% GH, CLOAD=1.3 nF 4 ns tF_GH GH Fall Time 90% GH to 10% GH, CLOAD=1.3 nF 3 ns Weak Low-Side Driver (LDRV2 Only under CCM2 Mode Operation, VCC = PVCC = 5 V) RSOURCE_GL Output Impedance, Sourcing Source Current=100 mA 0.82 Ω ISOURCE_GL Output Sourcing Peak Current GL=2.5 V 2 A RSINK_GL Output Impedance, Sinking Sink Current=100 mA 0.86 Ω ISINK_GL Output Sinking Peak Current GL=2.5 V 2 A Low-Side Driver (Paralleled LDRV1 + LDRV2 under CCM1 Mode Operation, VCC = PVCC = 5 V) RSOURCE_GL Output Impedance, Sourcing Source Current=100 mA 0.47 Ω ISOURCE_GL Output Sourcing Peak Current GL=2.5 V 4 A RSINK_GL Output Impedance, Sinking Sink Current=100 mA 0.29 Ω ISINK_GL Output Sinking Peak Current GL=2.5 V 7 A tR_GL GL Rise Time 10% GL to 90% GL, CLOAD=7.0 nF 9 ns tF_GL GL Fall Time 90% GL to 10% GL, CLOAD=7.0 nF 6 ns Thermal Monitor Current ITMON_25 Thermal Monitor Current TA=TJ=25°C 39.3 40.2 41.0 µA ITMON_150 Thermal Monitor Current TA=TJ=150°C 58 µA ITMON_SLOPE Thermal Monitor Current Slope TA=TJ=25 ~ 150°C 0.144 µA/°C Programmable Thermal Shutdown VACT_PTHDN Activation Voltage TA=TJ=125 ~ 150°C, RTMON=25 kΩ 1.39 1.62 V RPLD_EN-PTHDN Pull-Down Resistance TA=TJ=25°C, IPLD_EN-PTHDN=5 mA 30 Ω Catastrophic Fault (SW Monitor) VSW_MON SW Monitor Reference Voltage 1.3 2 V tD_FAULT Propagation Delay to Pull EN / FAULT# Signal = LOW 20 ns Boot Diode VF Forward-Voltage Drop IF=10 mA 0.4 V VR Breakdown Voltage IR=1 mA 30 V Note: 6. GH = Gate High, internal gate pin of the high-side MOSFET. |
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