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GD25LE256DFJS データシート(PDF) 52 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LE256DFJS データシート(HTML) 52 Page - GigaDevice Semiconductor (Beijing) Inc. |
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52 / 83 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LE256D 52 7.29. Program/Erase Resume (PER) (7AH) The Program/Erase Resume command must be written to resume the program or sector/block erase operation after a Program/Erase Suspend command. The Program/Erase Resume command will be accepted by the device only if the SUS2/SUS1 bit equal to 1 and the WIP bit equal to 0. After issued the SUS2/SUS1 bit in the status register will be cleared from 1 to 0 immediately, the WIP bit will be set from 0 to 1 within 200ns and the Sector or Block will complete the erase operation or the page will complete the program operation. The Program/Erase Resume command will be ignored unless a Program/Erase Suspend is active. The command sequence is show in Figure31. Figure31. Program/Erase Resume Sequence Diagram Command 0 1 2 3 4 5 6 7 7AH CS# SCLK SI SO Resume Erase/Program Figure31a. Program/Erase Resume Sequence Diagram (QPI) CS# SCLK IO0 IO1 IO2 IO3 0 1 Command 7AH Resume previously suspended program or Erase |
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