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RA4E2 データシート(PDF) 74 Page - Renesas Technology Corp

部品番号 RA4E2
部品情報  Renesas Microcontrollers
PDF  90 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4E2 データシート(HTML) 74 Page - Renesas Technology Corp

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FACI command
FSTATR.FRDY
Programming pulse
• Suspension during programming
FACI command
FSTATR.FRDY
Erasure pulse
• Suspension during erasure in suspend priority mode
FACI command
FSTATR.FRDY
Erasure pulse
• Suspension during erasure in erasure priority mode
Program
Suspend
Ready
Not Ready
Ready
Programming
tSPD
Erase
Suspend
Ready
Not Ready
Ready
tSEED
Erasing
Erase
Suspend
Resume
Suspend
Ready
Not Ready
Ready
Not Ready
tSESD1
tSESD2
Erasing
Erasing
tFD
• Forced Stop
FACI command
FSTATR.FRDY
Forced Stop
Not Ready
Ready
Resume
tPRT
Programming
Resume
tREST1
Ready
Not Ready
tREST2
Erasing
Resume
Not Ready
tREET
Erasing
Figure 2.66
Suspension and forced stop timing for flash memory programming and erasure
2.10.2
Data Flash Memory Characteristics
Table 2.44
Data flash memory characteristics (1 of 2)
Conditions: Program or erase: FCLK = 4 to 50 MHz
Read: FCLK ≤ 50 MHz
Parameter
Symbol
FCLK = 4 MHz
20 MHz ≤ FCLK ≤ 50 MHz
Unit
Test
conditions
Min
Typ*6 Max Min
Typ*6
Max
Programming time
4-byte
tDP4
0.36
3.8
0.16
1.7
ms
8-byte
tDP8
0.38
4.0
0.17
1.8
16-byte
tDP16
0.42
4.5
0.19
2.0
Erasure time
64-byte
tDE64
3.1
18
1.7
10
ms
128-byte
tDE128
4.7
27
2.6
15
256-byte
tDE256
8.9
50
4.9
28
Blank check time
4-byte
tDBC4
84
30
µs
Reprogramming/erasure cycle*1
NDPEC
125000*2 —
125000*2
Suspend delay during
programming
4-byte
tDSPD
264 —
120
µs
8-byte
264 —
120
16-byte
264 —
120
Programming resume time
tDPRT
110
50
µs
First suspend delay during
erasure in suspend priority mode
64-byte
tDSESD1 —
216 —
120
µs
128-byte
216 —
120
256-byte
216 —
120
RA4E2 Datasheet
2. Electrical Characteristics
R01DS0413EJ0110 Rev.1.10
Feb 28, 2023
Page 74 of 90



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