Nexperia

PMPB20XPEA

20 V, P-channel Trench MOSFET

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

-

-20

V

VGS

gate-source voltage

Tj = 25 °C

-12

12

V

VGS = -4.5 V; Tamb = 25 °C

[1]

-

-7.2

A

ID

drain current

VGS = -4.5 V; Tamb = 100 °C

[1]

-

-4.5

A

IDM

peak drain current

Tamb = 25 °C; single pulse; tp ≤ 10 µs

-

-30

A

Tamb = 25 °C

[1]

-

1.7

W

Ptot

total power dissipation

Tsp = 25 °C

-

12.5

W

Tj

junction temperature

-55

150

°C

Tamb

ambient temperature

-55

150

°C

Tstg

storage temperature

-65

150

°C

Source-drain diode

IS

source current

Tamb = 25 °C

[1]

-

-1.9

A

ESD maximum rating

VESD

electrostatic discharge

voltage

HBM

[2]

-

2000

V

Avalanche ruggedness

EDS(AL)S

non-repetitive drain-

source avalanche

energy

Tj(init) = 25 °C; ID = -2.1 A; DUT in

avalanche (unclamped)

-

22.1

mJ

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.

[2] Measured between all pins.

PMPB20XPEA

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© Nexperia B.V. 2018. All rights reserved

Product data sheet

27 March 2018

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