Nexperia

PMPB20XPEA

20 V, P-channel Trench MOSFET

10. Characteristics

Table 7. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID = -250 µA; VGS = 0 V; Tj = 25 °C

-20

-

-

V

VGSth

gate-source threshold

voltage

ID = -250 µA; VDS = VGS; Tj = 25 °C

-0.4

-0.7

-1

V

IDSS

drain leakage current

VDS = -20 V; VGS = 0 V; Tj = 25 °C

-

-

-1

µA

VGS = -8 V; VDS = 0 V; Tj = 25 °C

-

-

-10

µA

IGSS

gate leakage current

VGS = 8 V; VDS = 0 V; Tj = 25 °C

-

-

10

µA

VGS = -4.5 V; ID = -7.2 A; Tj = 25 °C

-

19

23.5

mΩ

VGS = -4.5 V; ID = -7.2 A; Tj = 150 °C

-

27

33

mΩ

VGS = -2.5 V; ID = -6.4 A; Tj = 25 °C

-

22

29

mΩ

RDSon

drain-source on-state

resistance

VGS = -1.8 V; ID = -3.7 A; Tj = 25 °C

-

28

39

mΩ

gfs

forward

transconductance

VDS = -10 V; ID = -7.2 A; Tj = 25 °C

-

50

-

S

RG

gate resistance

f = 1 MHz

-

5.2

-

Ω

Dynamic characteristics

QG(tot)

total gate charge

-

30

45

nC

QGS

gate-source charge

-

4.1

-

nC

QGD

gate-drain charge

VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;

Tj = 25 °C

-

7.1

-

nC

Ciss

input capacitance

-

2945

-

pF

Coss

output capacitance

-

245

-

pF

Crss

reverse transfer

capacitance

VDS = -10 V; f = 1 MHz; VGS = 0 V;

Tj = 25 °C

-

210

-

pF

td(on)

turn-on delay time

-

13

-

ns

tr

rise time

-

60

-

ns

td(off)

turn-off delay time

-

92

-

ns

tf

fall time

VDS = -10 V; ID = -7.2 A; VGS = -4.5 V;

RG(ext) = 6 Ω; Tj = 25 °C

-

50

-

ns

Source-drain diode

VSD

source-drain voltage

IS = -1.9 A; VGS = 0 V; Tj = 25 °C

-

-0.7

-1.2

V

trr

reverse recovery time

-

31

-

ns

Qr

recovered charge

IS = -1.9 A; dIS/dt = 100 A/µs;

VGS = 0 V; VDS = -10 V; Tj = 25 °C

-

20

-

nC

PMPB20XPEA

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© Nexperia B.V. 2018. All rights reserved

Product data sheet

27 March 2018

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