Nexperia

PMPB20XPEA

20 V, P-channel Trench MOSFET

Tj (°C)

- 75

175

125

25

75

- 25

017aaa123

40

80

120

Pder

(%)

0

Fig. 1. Normalized total power dissipation as a

function of junction temperature

Tj (°C)

- 75

175

125

25

75

- 25

017aaa124

40

80

120

Ider

(%)

0

Fig. 2. Normalized continuous drain current as a

function of junction temperature

017aaa875

-1

-10-1

-10

-102

ID

(A)

-10-2

VDS (V)

-10-2

-102

-10

-10-1

-1

DC; Tamb = 25 °C;

drain mounting pad 6 cm2

tp = 10 µs

tp = 100 µs

tp = 1 ms

tp = 10 ms

DC; Tsp = 25 °C

tp = 100 ms

Limit RDSon = VDS/ID

IDM = single pulse

Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-

source voltage

PMPB20XPEA

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© Nexperia B.V. 2018. All rights reserved

Product data sheet

27 March 2018

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