Nexperia

PMPB20XPEA

20 V, P-channel Trench MOSFET

QG (nC)

0

10

20

30

35

25

15

5

017aaa884

-1.5

-3.0

-4.5

VGS

(V)

0

ID = -7.1 A; VDS = -10 V; Tamb = 25 °C

Fig. 14. Gate-source voltage as a function of gate

charge; typical values

017aaa137

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

ID

QGS

VGS(pl)

Fig. 15. MOSFET transistor: Gate charge waveform

definitions

VSD (V)

0.0

-0.8

-0.6

-0.2

-0.4

aaa-004181

-1.0

-0.5

-1.5

-2.0

IS

(A)

0.0

Tj = 25 °C

Tj = 150 °C

VGS = 0 V

Fig. 16. Source current as a function of source-drain voltage; typical values

PMPB20XPEA

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Product data sheet

27 March 2018

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