Nexperia

PMPB20XPEA

20 V, P-channel Trench MOSFET

VGS (V)

0

-2.0

-1.5

-0.5

-1.0

017aaa880

-16

-20

-12

-8

-4

-24

-28

ID

(A)

0

Tj = 150 °C

Tj = 25 °C

VDS > ID × RDSon

Fig. 10. Transfer characteristics: drain current as a

function of gate-source voltage; typical values

Tj (°C)

-60

180

120

0

60

017aaa881

1.0

1.2

0.8

1.4

1.6

a

0.6

Fig. 11. Normalized drain-source on-state resistance

as a function of junction temperature; typical

values

Tj (°C)

-60

180

120

0

60

aaa-028287

-0.8

-0.4

-1.2

-1.6

VGS(th)

(V)

0

min

typ

max

ID = -250 µA; VDS = VGS

Fig. 12. Gate-source threshold voltage as a function of

junction temperature

017aaa883

VDS (V)

-10-1

-102

-10

-1

103

104

C

(pF)

102

Ciss

Coss

Crss

f = 1 MHz; VGS = 0 V

Fig. 13. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

PMPB20XPEA

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Product data sheet

27 March 2018

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