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AM29PDL129H データシート(PDF) 30 Page - SPANSION

部品番号 AM29PDL129H
部品情報  128 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-only, Page Mode Simultaneous Read/Write Flash Memory with Enhanced VersatileIO Control and Dual chip Enable
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Am29PDL129H
November 2, 2005
Command Definitions Tables
Legend:
BA = Address of bank switching to autoselect mode, bypass mode, or
erase operation. Determined by A21:A20, see Tables 4 and for more
detail.
PA = Program Address (A21:A0). Addresses latch on falling edge of
WE# or CE1#/CE2# pulse, whichever happens later.
PD = Program Data (DQ15:DQ0) written to location PA. Data latches
on rising edge of WE# or CE1#/CE2# pulse, whichever happens first.
RA = Read Address (A21:A0).
RD = Read Data (DQ15:DQ0) from location RA.
SA = Sector Address (A21:A12) for verifying (in autoselect mode) or
erasing.
WD = Write Data. See “Configuration Register” definition for specific
write data. Data latched on rising edge of WE#.
X = Don’t care
Notes:
1.
See Table 1 for description of bus operations.
2.
All values are in hexadecimal.
3.
Shaded cells in table denote read cycles. All other cycles are
write operations.
4.
During unlock and command cycles, when lower address bits are
555 or 2AAh as shown in table, address bits higher than A11
(except where BA is required) and data bits higher than DQ7 are
don’t cares.
5.
No unlock or command cycles required when bank is reading
array data.
6.
The Reset command is required to return to reading array (or to
erase-suspend-read mode if previously in Erase Suspend) when
bank is in autoselect mode, or if DQ5 goes high (while bank is
providing status information).
7.
Fourth cycle of autoselect command sequence is a read cycle.
System must provide bank address to obtain manufacturer ID or
device ID information. See Autoselect Command Sequence for
more information.
8.
The data is C0h for factory or customer locked and 80h for factory
locked.
9.
The data is 00h for an unprotected sector group and 01h for a
protected sector group.
10. Device ID must be read across cycles 4, 5, and 6.
11. System may read and program in non-erasing sectors, or enter
autoselect mode, when in Program/Erase Suspend mode.
Program/Erase Suspend command is valid only during a sector
erase operation, and requires bank address.
12. Program/Erase Resume command is valid only during Erase
Suspend mode, and requires bank address.
13. Command is valid when device is ready to read array data or
when device is in autoselect mode.
14. must be at VID during the entire operation of command.
15. Unlock Bypass Entry command is required prior to any Unlock
Bypass operation. Unlock Bypass Reset command is required to
return to the reading array.
Table 14.
Memory Array Command Definitions
Command (Notes)
Bus Cycles (Notes 1–4)
Addr Data Addr Data
Addr
Data
Addr
Data
Addr
Data
Addr
Data
Read (5)
1
RA
RD
Reset (6)
1
XXX
F0
Autoselect
(Note 7)
Manufacturer ID
4
555
AA
2AA
55
555
90
(BA)X00
01
Device ID (10)
6
555
AA
2AA
55
555
90
(BA)X01
7E
(BA)X0E
21
(BA)X0F
00
SecSi Sector Factory
Protect (8)
4
555
AA
2AA
55
555
90
X03
(see
note 8)
Sector Group Protect Verify
(9)
4
555
AAA
2AA
55
555
90
(SA)X02
XX00/
XX01
Program
4
555
AA
2AA
55
555
A0
PA
PD
Chip Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
Sector Erase
6
555
AA
2AA
55
555
80
555
AA
2AA
55
SA
30
Program/Erase Suspend (11)
1
BA
B0
Program/Erase Resume (12)
1
BA
30
CFI Query (13)
1
55
98
Accelerated Program (15)
2
XX
A0
PA
PD
Unlock Bypass Entry (15)
3
555
AA
2AA
55
555
20
Unlock Bypass Program (15)
2
XX
A0
PA
PD
Unlock Bypass Erase (15)
2
XX
80
XX
10
Unlock Bypass CFI (13, 15)
1
XX
98
Unlock Bypass Reset (15)
2
XXX
90
XXX
00



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