November 2, 2005

Am29PDL129H

45

ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

programming typicals assume checkerboard pattern. All values are subject to change.

2. Under worst case conditions of 90

°C, V

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Tables

for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

BGA BALL CAPACITANCE

Notes:

1.

Sampled, not 100% tested.

2.

DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.4

5

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

108

sec

Word Program Time

6

210

µs

Excludes system level

overhead (Note 5)

Accelerated Word Program Time

4

120

µs

Chip Program Time (Note 3)

50

200

sec

Description

Min

Max

(including A9, OE#, and RESET#)

–1.0 V

13 V

–1.0 V

–100 mA

+100 mA

Parameter

Symbol

Parameter Description

Test Setup

Typ

Max

Unit

Input Capacitance

4.2

5.0

pF

Output Capacitance

5.4

6.5

pF

Control Pin Capacitance

3.9

4.7

pF

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years