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CS5305GDWR28 データシート(PDF) 5 Page - ON Semiconductor |
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CS5305GDWR28 データシート(HTML) 5 Page - ON Semiconductor |
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5 / 33 page ![]() CS5305 http://onsemi.com 5 ELECTRICAL CHARACTERISTICS (continued) (0°C < TA < 70°C; 0°C < TJ < 125°C; 9.5 V < VCC < 14 V; CGATEX = 100 pF, CCOMP = 0.01μF, CSCOMP = 0.01μF, CVCC = 0.1μF, RROSC = 32.4 kΩ, RSHARE = 60.4 kΩ, V(OCSET) = 0.54 V, DAC Code 01110; unless otherwise stated.) Parameter Unit Max Typ Min Test Conditions Voltage Identification DAC (0 = Connected to GND, 1 = Open (Pulled−up to internal 3.3 V) or Pulled−up to external voltage 3 13 V) 0 0 1 1 1 1.675 1.535 1.550 1.566 V 0 0 1 1 0 1.700 1.560 1.575 1.591 V 0 0 1 0 1 1.725 1.584 1.600 1.616 V 0 0 1 0 0 1.750 1.609 1.625 1.641 V 0 0 0 1 1 1.775 1.634 1.650 1.667 V 0 0 0 1 0 1.800 1.658 1.675 1.692 V 0 0 0 0 1 1.825 1.683 1.700 1.717 V 0 0 0 0 0 1.850 1.708 1.725 1.742 V Input Threshold VID4, VID3, VID2, VID1, VID0 1.00 1.25 1.5 V Input Pull−up Resistance 0 V < VID4, VID3, VID2,VID1, VID0 < 3.3 V 25 50 100 kΩ Pull−up Voltage 1.0 MΩ to GND 2.5 2.7 3.0 V SGND Bias Current SGND < 55 mV, All DAC Codes 10 20 40 μA Power Good Output Upper Threshold Force PWRGDS−SGND SGND < 55 mV 1.876 (−5%) 1.975 2.074 (+5%) V Lower Threshold Force PWRGDS−SGND SGND < 55 mV 0.95 × (VID − 125 mV) or −2.6% from nominal PWRGD Threshold 0.975 × (VID − 125 mV) VID − 125 mV or +2.6% from nominal PWRGD Threshold V VID4 VID3 VID2 VID1 VID0 1 1 1 1 0 0.926 0.951 0.975 V 1 1 1 0 1 0.950 0.975 1.000 V 1 1 1 0 0 0.974 1.000 1.025 V 1 1 0 1 1 0.998 1.024 1.050 V 1 1 0 1 0 1.021 1.048 1.075 V 1 1 0 0 1 1.045 1.073 1.100 V 1 1 0 0 0 1.069 1.097 1.125 V 1 0 1 1 1 1.093 1.122 1.150 V 1 0 1 1 0 1.116 1.146 1.175 V 1 0 1 0 1 1.140 1.170 1.200 V 1 0 1 0 0 1.164 1.195 1.225 V 1 0 0 1 1 1.188 1.219 1.250 V 1 0 0 1 0 1.211 1.243 1.275 V 1 0 0 0 1 1.235 1.268 1.300 V 1 0 0 0 0 1.259 1.292 1.325 V 0 1 1 1 1 1.283 1.316 1.350 V 0 1 1 1 0 1.306 1.341 1.375 V |
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