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PRSP0016JC-B データシート(PDF) 48 Page - Renesas Technology Corp

部品番号 PRSP0016JC-B
部品情報  RENESAS MCU
PDF  85 Pages
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メーカー  RENESAS [Renesas Technology Corp]
ホームページ  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

PRSP0016JC-B データシート(HTML) 48 Page - Renesas Technology Corp

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RL78/G16
2. ELECTRICAL SPECIFICATIONS (TA
= −40 to +85°C)
R01DS0431EJ0130
Rev.1.30
Page 48 of 85
May 19, 2025
2.8
Flash Memory Programming Characteristics
[TA =
−40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V]
Item
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Number of code flash rewrites
Note 1, Note 2
Cerwr
Retained for 20 years
TA = +85°C
1000
Times
Number of data flash rewrites
Note 1, Note 2
Retained for 1 year
TA = +25°C
1,000,000
Times
Retained for 5 years
TA = +85°C
100,000
Times
Retained for 20 years
TA = +85°C
10,000
Times
Note 1.
1 erase + 1 write after the erase is regarded as 1 rewrite. The retaining years are until next rewrite after the
rewrite.
Note 2.
These are the characteristics of the flash memory and the results obtained from reliability testing by Renesas
Electronics.
Code flash/data flash self-programming time
[TA =
−40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V]
Item
Symbol
fCLK = 1 MHz
fCLK = 16 MHz
Unit
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
Writing (4 bytes)
tP4
104
905
53.8
504.9
µs
Block erasure (1 KB)
tE1K
7.9
262.3
5.5
214.1
ms
Caution
The listed values do not include the time until the operations of the flash memory start following
execution of an instruction by software.
2.9
Dedicated Flash Memory Programmer Communication (UART)
[TA
= −40 to +85°C, 2.4 V ≤ VDD ≤ 5.5 V, VSS = 0 V]
Item
Symbol
Condition
MIN.
TYP.
MAX.
Unit
Transfer rate
115,200
bps
Remark
The transfer rate during flash memory programming is fixed to 115,200 bps.



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