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TAS5708 データシート(PDF) 15 Page - Texas Instruments |
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TAS5708 データシート(HTML) 15 Page - Texas Instruments |
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15 / 56 page ![]() −100 −90 −80 −70 −60 −50 −40 f − Frequency − Hz G015 20 100 1k 10k 20k Left to Right Right to Left PO = 1 W PVCC = 24 V RL = 8 Ω DETAILED DESCRIPTION POWER SUPPLY TAS5708 www.ti.com ........................................................................................................................................................................................... SLOS570 – DECEMBER 2008 TYPICAL CHARACTERISTICS, BTL CONFIGURATION (continued) CROSSTALK vs FREQUENCY Figure 17. To facilitate system design, the TAS5708 needs only a 3.3-V supply in addition to the 10-V to 26-V power-stage supply. An internal voltage regulator provides suitable voltage levels for the gate drive circuitry. Additionally, all circuitry requiring a floating voltage supply, e.g., the high-side gate drive, is accommodated by built-in bootstrap circuitry requiring only a few external capacitors. In order to provide good electrical and acoustical characteristics, the PWM signal path for the output stage is designed as identical, independent half-bridges. For this reason, each half-bridge has separate bootstrap pins (BST_X), and power-stage supply pins (PVCC_X). The gate drive voltages (VCLAMP_AB and VCLAMP_CD) are derived from the PVCC voltage. Special attention should be paid to placing all decoupling capacitors as close to their associated pins as possible. In general, inductance between the power-supply pins and decoupling capacitors must be avoided. For a properly functioning bootstrap circuit, a small ceramic capacitor must be connected from each bootstrap pin (BST_X) to the power-stage output pin (OUT_X). When the power-stage output is low, the bootstrap capacitor is charged through an internal diode connected between the gate-drive regulator output pin (VCLAMP_X) and the bootstrap pin. When the power-stage output is high, the bootstrap capacitor potential is shifted above the output potential and thus provides a suitable voltage supply for the high-side gate driver. In an application with PWM switching frequencies in the range from 352 kHz to 384 kHz, it is recommended to use 220-nF ceramic capacitors, size 0603 or 0805, for the bootstrap supply. These 220-nF capacitors ensure sufficient energy storage, even during minimal PWM duty cycles, to keep the high-side power stage FET (LDMOS) fully turned on during the remaining part of the PWM cycle. Special attention should be paid to the power-stage power supply; this includes component selection, PCB placement, and routing. As indicated, each half-bridge has independent power-stage supply pins (PVCC_X). For optimal electrical performance, EMI compliance, and system reliability, it is important that each PVCC_X pin is decoupled with a 100-nF ceramic capacitor placed as close as possible to each supply pin. The TAS5708 is fully protected against erroneous power-stage turnon due to parasitic gate charging. Copyright © 2008, Texas Instruments Incorporated Submit Documentation Feedback 15 Product Folder Link(s): TAS5708 |
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