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MSS7341 データシート(PDF) 3 Page - Microchip Technology |
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MSS7341 データシート(HTML) 3 Page - Microchip Technology |
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3 / 38 page ![]() © 2011 Microchip Technology Inc. DS25004A-page 3 MCP16301 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings † VIN, SW ............................................................... -0.5V to 40V BOOST – GND ................................................... -0.5V to 46V BOOST – SW Voltage........................................ -0.5V to 6.0V VFB Voltage ........................................................ -0.5V to 6.0V EN Voltage ............................................. -0.5V to (VIN + 0.3V) Output Short Circuit Current ................................. Continuous Power Dissipation ....................................... Internally Limited Storage Temperature ................................... -65 °C to +150°C Ambient Temperature with Power Applied ..... -40 °C to +85°C Operating Junction Temperature.................. -40 °C to +125°C ESD Protection On All Pins: HBM ................................................................. 3 kV MM .................................................................200 V † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maximum rating conditions for extended periods may affect device reliability. DC CHARACTERISTICS Electrical Characteristics: Unless otherwise indicated, T A = +25°C, VIN = VEN = 12V, VBOOST - VSW = 3.3V, VOUT = 3.3V, IOUT = 100 mA, L = 15 µH, COUT = CIN = 2 X 10 µF X7R Ceramic Capacitors Boldface specifications apply over the T A range of -40 oC to +85oC. Parameters Sym Min Typ Max Units Conditions Input Voltage VIN — 4.0 30 V Note 1 Feedback Voltage VFB 0.784 0.800 0.816 V Output Voltage Adjust Range VOUT 2.0 — 15.0 V Note 2 Feedback Voltage Line Regulation (ΔV FB/VFB)/ΔVIN — 0.01 0.1 %/V VIN = 12V to 30V; Feedback Input Bias Current IFB -250 ±10 +250 nA Undervoltage Lockout Start UVLOSTRT — 3.5 4.0 V VIN Rising Undervoltage Lockout Stop UVLOSTOP 2.4 3.0 — V VIN Falling Undervoltage Lockout Hysteresis UVLOHYS — 0.4 — V Switching Frequency fSW 425 500 550 kHz IOUT = 200 mA Maximum Duty Cycle DCMAX 90 95 — % VIN = 5V; VFB = 0.7V; IOUT = 100 mA Minimum Duty Cycle DCMIN — 1 — % NMOS Switch On Resistance RDS(ON) — 0.46 — Ω VBOOST - VSW = 3.3V NMOS Switch Current Limit IN(MAX) — 1.3 — A VBOOST - VSW = 3.3V Quiescent Current IQ — 2 7.5 mA VBOOST= 3.3V; Note 3 Quiescent Current - Shutdown IQ — 7 10 µA VOUT = EN = 0V Maximum Output Current IOUT 600 — — mA Note 1 EN Input Logic High VIH 1.4 — — V EN Input Logic Low VIL — — 0.4 V EN Input Leakage Current IENLK — 0.05 1.0 µA VEN = 12V Soft-Start Time tSS — 150 — µS EN Low to High, 90% of VOUT Note 1: The input voltage should be > output voltage + headroom voltage; higher load currents increase the input voltage necessary for regulation. See characterization graphs for typical input to output operating voltage range. 2: For VIN < VOUT, VOUT will not remain in regulation. 3: VBOOST supply is derived from VOUT. |
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