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LT1956IGN データシート(PDF) 18 Page - Linear Technology |
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LT1956IGN データシート(HTML) 18 Page - Linear Technology |
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18 / 28 page ![]() 18 LT1956/LT1956-5 1956f Board layout also has a significant effect on thermal resis- tance. For the GN package, Pins 1, 8, 9 and 16, GND, are a continuous copper plate that runs under the LT1956 die. This is the best thermal path for heat out of the package. Reducing the thermal resistance from Pins 1, 8, 9 and 16 onto the board will reduce die temperature and increase the power capability of the LT1956. This is achieved by providing as much copper area as possible around these pins. Adding multiple solder filled feedthroughs under and around these four corner pins to the ground plane will also help. Similar treatment to the catch diode and coil termi- nations will reduce any additional heating effects. For the FE package, the exposed pad should be soldered to the copper ground plane underneath the device. PARASITIC RESONANCE Resonance or “ringing” may sometimes be seen on the switch node (see Figure 7). Very high frequency ringing following switch rise time is caused by switch/diode/input capacitor lead inductance and diode capacitance. Schot- tky diodes have very high “Q” junction capacitance that can ring for many cycles when excited at high frequency. If total lead length for the input capacitor, diode and switch path is 1 inch, the inductance will be approximately 25nH. At switch off, this will produce a spike across the NPN output device in addition to the input voltage. At higher currents this spike can be in the order of 10V to 20V or higher with a poor layout, potentially exceeding the abso- lute max switch voltage. The path around switch, catch diode and input capacitor must be kept as short as possible to ensure reliable operation. When looking at this, APPLICATIO S I FOR ATIO a >100MHz oscilloscope must be used, and waveforms should be observed on the leads of the package. This switch off spike will also cause the SW node to go below ground. The LT1956 has special circuitry inside which mitigates this problem, but negative voltages over 0.8V lasting longer than 10ns should be avoided. Note that 100MHz oscilloscopes are barely fast enough to see the details of the falling edge overshoot in Figure 7. A second, much lower frequency ringing is seen during switch off time if load current is low enough to allow the inductor current to fall to zero during part of the switch off time (see Figure 8). Switch and diode capacitance resonate with the inductor to form damped ringing at 1MHz to 10 MHz. This ringing is not harmful to the regulator and it has not been shown to contribute significantly to EMI. Any attempt to damp it with a resistive snubber will degrade efficiency. THERMAL CALCULATIONS Power dissipation in the LT1956 chip comes from four sources: switch DC loss, switch AC loss, boost circuit current, and input quiescent current. The following formu- las show how to calculate each of these losses. These formulas assume continuous mode operation, so they should not be used for calculating efficiency at light load currents. Switch loss: P RI V V tI V f SW SW OUT OUT IN EFF OUT IN = () ( ) + ()( )( ) 2 12 (/ ) Figure 7. Switch Node Resonance 50ns/DIV 1956 F07 2V/DIV SW RISE SW FALL SWITCH NODE VOLTAGE INDUCTOR CURRENT AT IOUT = 0.1A VIN = 25V 500ns/DIV 1956 F08 VOUT = 5V L = 15 µH Figure 8. Discontinuous Mode Ringing 10V/DIV 0.2A/DIV |
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