| データシートサーチシステム |
|
LT1956IGN データシート(PDF) 19 Page - Linear Technology |
|
|
|||||||||||||||||||||||||||||
LT1956IGN データシート(HTML) 19 Page - Linear Technology |
|
19 / 28 page ![]() 19 LT1956/LT1956-5 1956f APPLICATIO S I FOR ATIO Boost current loss: P VI V BOOST OUT OUT IN = () 2 36 / Quiescent current loss: PV V Q IN OUT = ()+ () 0 0015 0 003 .. RSW = switch resistance (≈0.3) hot tEFF = effective switch current/voltage overlap time = (tr + tf + tIr + tIf) tr = (VIN/1.2)ns tf = (VIN/1.7)ns tIr = tIf = (IOUT/0.05)ns f = switch frequency Example: with VIN = 12V, VOUT = 5V and IOUT = 1A: P W PW PW SW BOOST Q = ()( ) ( ) + ()()()( )() =+ = = () () = = ()+ () = − 03 1 5 12 57 10 1 2 1 12 500 10 0 125 0 171 0 296 51 36 12 0 058 12 0 0015 5 0 003 0 033 2 93 2 . •/ • .. . / . .. . Total power dissipation in the IC is given by: PTOT = PSW + PBOOST + PQ = 0.296W + 0.058W + 0.033W = 0.39W Thermal resistance for the LT1956 packages is influenced by the presence of internal or backside planes. SSOP (GN16) Package: With a full plane under the GN16 package, thermal resistance will be about 85 °C/W. TSSOP (Exposed Pad) Package: With a full plane under the TSSOP package, thermal resistance ( θJA) will be about 45 °C/W. To calculate die temperature, use the proper thermal resistance ( θJA) number for the desired package an add in worst-case ambient temperature: TJ = TA + (θJA • PTOT) When estimating ambient, remember the nearby catch diode and inductor will also be dissipating power. P VV V I V DIODE F IN OUT LOAD IN = ( )( – )( ) VF = Forward voltage of diode (assume 0.63V at 1A) PW DIODE == (. )( – )( ) . 063 12 5 1 12 037 Notice that the catch diode’s forward voltage contributes a significant loss in the overall system efficiency. A larger, low VF diode can improve efficiency by several percent. PINDUCTOR = (ILOAD)(LDCR) LDCR = inductor DC resistance (assume 0.1Ω) PINDUCTOR = (1)(0.1) = 0.1W Typical thermal resistance of the board is 10 °C/W. Taking the catch diode and inductor power dissipation into ac- count and using the example calculations for LT1956 dis- sipation, the LT1956 die temperature will be estimated as: TJ = TA + (θJA • PTOT) + (10 • [PDIODE + PINDUCTOR]) With the GN16 package ( θJA = 85°C/W), at an ambient temperature of 70 °C: TJ = 70 + (85 • 0.39) + (10 • 0.47) = 108°C With the TSSOP package ( θJA = 45°C/W) at an ambient temperature of 70 °C: TJ = 70 + (45 • 0.37) + (10 • 0.47) = 91°C Die temperature can peak for certain combinations of VIN, VOUT and load current. While higher VIN gives greater switch AC losses, quiescent and catch diode losses, a lower VIN may generate greater losses due to switch DC losses. In general, the maximum and minimum VIN levels should be checked with maximum typical load current for calculation of the LT1956 die temperature. If a more accurate die temperature is required, a measurement of the SYNC pin resistance (to GND) can be used. The SYNC pin resistance can be measured by forcing a voltage no greater than 0.5V at the pin and monitoring the pin current over temperature in a oven. This should be done with minimal device power (low VIN and no switching [VC = 0V]) in order to calibrate SYNC pin resistance with ambient (oven) temperature. |
|
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか? [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |