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LT1956IGN データシート(PDF) 19 Page - Linear Technology

部品番号 LT1956IGN
部品情報  High Voltage, 1.5A, 500kHz Step-Down
PDF  28 Pages
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メーカー  LINER [Linear Technology]
ホームページ  http://www.linear.com
Logo LINER - Linear Technology

LT1956IGN データシート(HTML) 19 Page - Linear Technology

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19
LT1956/LT1956-5
1956f
APPLICATIO S I FOR ATIO
Boost current loss:
P
VI
V
BOOST
OUT
OUT
IN
=
()
2
36
/
Quiescent current loss:
PV
V
Q
IN
OUT
=
()+
()
0 0015
0 003
..
RSW = switch resistance (≈0.3) hot
tEFF = effective switch current/voltage overlap time
= (tr + tf + tIr + tIf)
tr = (VIN/1.2)ns
tf = (VIN/1.7)ns
tIr = tIf = (IOUT/0.05)ns
f = switch frequency
Example: with VIN = 12V, VOUT = 5V and IOUT = 1A:
P
W
PW
PW
SW
BOOST
Q
= ()( ) ( ) +
()()()( )()
=+
=
= () () =
=
()+ () =
03 1
5
12
57 10
1 2 1 12 500 10
0 125 0 171 0 296
51 36
12
0 058
12 0 0015
5 0 003
0 033
2
93
2
.
•/
..
.
/
.
..
.
Total power dissipation in the IC is given by:
PTOT = PSW + PBOOST + PQ
= 0.296W + 0.058W + 0.033W = 0.39W
Thermal resistance for the LT1956 packages is influenced
by the presence of internal or backside planes.
SSOP (GN16) Package: With a full plane under the GN16
package, thermal resistance will be about 85
°C/W.
TSSOP (Exposed Pad) Package: With a full plane under the
TSSOP package, thermal resistance (
θJA) will be about
45
°C/W.
To calculate die temperature, use the proper thermal
resistance (
θJA) number for the desired package an add in
worst-case ambient temperature:
TJ = TA + (θJA • PTOT)
When estimating ambient, remember the nearby catch
diode and inductor will also be dissipating power.
P
VV
V
I
V
DIODE
F
IN
OUT
LOAD
IN
=
( )(
)(
)
VF = Forward voltage of diode (assume 0.63V at 1A)
PW
DIODE ==
(.
)(
– )( )
.
063 12 5 1
12
037
Notice that the catch diode’s forward voltage contributes
a significant loss in the overall system efficiency. A larger,
low VF diode can improve efficiency by several percent.
PINDUCTOR = (ILOAD)(LDCR)
LDCR = inductor DC resistance (assume 0.1Ω)
PINDUCTOR = (1)(0.1) = 0.1W
Typical thermal resistance of the board is 10
°C/W. Taking
the catch diode and inductor power dissipation into ac-
count and using the example calculations for LT1956 dis-
sipation, the LT1956 die temperature will be estimated as:
TJ = TA + (θJA • PTOT) + (10 • [PDIODE + PINDUCTOR])
With the GN16 package (
θJA = 85°C/W), at an ambient
temperature of 70
°C:
TJ = 70 + (85 • 0.39) + (10 • 0.47) = 108°C
With the TSSOP package (
θJA = 45°C/W) at an ambient
temperature of 70
°C:
TJ = 70 + (45 • 0.37) + (10 • 0.47) = 91°C
Die temperature can peak for certain combinations of
VIN, VOUT and load current. While higher VIN gives greater
switch AC losses, quiescent and catch diode losses, a
lower VIN may generate greater losses due to switch DC
losses. In general, the maximum and minimum VIN levels
should be checked with maximum typical load current for
calculation of the LT1956 die temperature. If a more
accurate die temperature is required, a measurement of
the SYNC pin resistance (to GND) can be used. The SYNC
pin resistance can be measured by forcing a voltage no
greater than 0.5V at the pin and monitoring the pin
current over temperature in a oven. This should be done
with minimal device power (low VIN and no switching
[VC = 0V]) in order to calibrate SYNC pin resistance with
ambient (oven) temperature.



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