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L6759D データシート(PDF) 18 Page - STMicroelectronics |
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L6759D データシート(HTML) 18 Page - STMicroelectronics |
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18 / 51 page ![]() Device configuration and pin-strapping tables L6759D 18/51 Doc ID 023240 Rev 1 4.2 Programming HiZ level The L6759D is able to manage different levels for HiZ on PWMx guaranteeing flexibility in driving different external drivers as well as DrMOS ICs. Once VCC5, VDRV, and VIN voltages are above the respective UVLO (undervoltage lockout) thresholds (see Figure 6), the device uses PWM1 and PWM2 to detect the driver/DrMOS connected in order to program the suitable Hiz level of PWMx signals. During regulation, the Hiz level is used to force the external MOSFETs into high impedance state. ● PWM1 sources a constant 10 µA current, if its voltage results higher than 2.8 V, the HiZ level used during the regulation is 1.4 V, if lower, PWM2 information is used. ● PWM2 is kept in HiZ, if its voltage results higher than 2 V, the HiZ level used during the regulation is 2 V, if lower, 1.6 V. An external resistor divider can be placed on PWM1 and PWM2 to force the detection of the correct HiZ level. They must be designed considering the external driver/DrMOS selected and the HiZ level requested. Table 6. Pin-strapping (1) Rdown [k Ω] Rup [k Ω] IMAX ADDR IMAX [A] (2) JMode VBOOT SVI ADDR (3) VFDE DPM12 DPM23 Droop core 10 1.5 ON 1.500 V 0100b OFF 12 A 24 A ON 10 2.7 1.350 V OFF 22 6.8 OFF 1.500 V 10 A 20 A ON 10 3.6 1.350 V OFF 27 11 ON 1.500 V 8 A 18 A ON 12 5.6 1.350 V OFF 82 43 OFF 1.500 V OFF OFF ON 13 7.5 1.350 V OFF 56 36 ON 1.500 V ON 12 A 24 A ON 18 13 1.350 V OFF 15 12 OFF 1.500 V 10 A 20 A ON 18 16 1.350 V OFF 15 14.7 ON 1.500 V 8 A 18 A ON 10 11 1.350 V OFF 18 22 OFF 1.500 V OFF OFF ON 56 75 1.350 V OFF N 25 56 + ⋅ N 25 48 + ⋅ N 25 40 + ⋅ N 25 32 + ⋅ |
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