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L6759D データシート(PDF) 41 Page - STMicroelectronics

部品番号 L6759D
部品情報  Fully configurable through PMBus
PDF  51 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

L6759D データシート(HTML) 41 Page - STMicroelectronics

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L6759D
System control loop compensation
Doc ID 023240 Rev 1
41/51
limiting transition corresponds to the load-removal since the inductor results as being
discharged only by Vout (while it is charged by VIN-VOUT during a load appliance).
Note:
The introduction of a capacitor (CI) in parallel to RFB significantly speeds up the transient
response by coupling the output voltage dV/dt on the FB pin, therefore using the error
amplifier as a comparator. The COMP pin suddenly reacts and, also thanks to the LTB
Technologycontrol scheme, all the phases can be turned on together to immediately give
to the output the required energy. Typical design considers starting from values in the range
of 100 pF validating the effect by bench testing. An additional series resistor (RI) can also be
used.
11.2
LTB Technology
LTB Technology further enhances the performance of the controller by reducing the system
latencies and immediately turning on all the phases to provide the correct amount of energy
to the load optimizing the output capacitor count.
LTB Technology monitors the output voltage through a dedicated pin detecting load-
transients with selected dV/dt, it cancels the interleaved phase-shift, simultaneously turning
on all phases.
The LTB detector is able to detect output load transients by coupling the output voltage
through an RLTB - CLTB network. After detecting a load transient, all the phases are turned
on together and the EA latencies results as bypassed as well.
Sensitivity of the load transient detector can be programmed in order to control precisely
both the undershoot and the ring-back.
LTB Technology design tips.
Decrease RLTB to increase the system sensitivity making the system sensitive to
smaller dVOUT
Increase CLTB to increase the system sensitivity making the system sensitive to higher
dV/dt
Increase Ri to increase the width of the LTB pulse
Increase Ci to increase the LTB sensitivity over frequency.



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