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MCP8021 データシート(PDF) 6 Page - Microchip Technology |
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MCP8021 データシート(HTML) 6 Page - Microchip Technology |
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6 / 66 page ![]() MCP8021/2 DS20006265D-page 6 2020-2024 Microchip Technology Inc. and its subsidiaries 1.0 ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings† Input Voltage, VDD..........................................................................................................................(GND – 0.3V) to +40V Internal Power Dissipation......................................................................................................................Internally Limited Operating Junction Temperature (Note 2)...............................................................................................-40°C to +165°C Transient Junction Temperature (Note 1)..............................................................................................................+170°C Storage Temperature (Note 2) ................................................................................................................-55°C to +165°C Digital I/O .................................................................................................................................................... -0.3V to 5.5V Low-Voltage Analog I/O............................................................................................................................... -0.3V to 5.5V VBx, WAKE ....................................................................................................................................(GND – 0.3V) to +40V PHx, HSx........................................................................................................................................(GND – 5.5V) to +40V VBOOT, LSx..................................................................................................................................(GND – 0.3V) to +13.2V CAP1, CAP2 ..................................................................................................................................(GND – 0.3V) to +40V ESD and Latch-Up Protection: All Pins 2kV HBM Corner Pins 750V CDM All Other Pins 500V CDM Latch-Up Protection – All Pins........................................................................................................................> 100 mA Note 1: Transient junction temperatures should not exceed one second in duration. Sustained junction temperatures above +170°C may impact the device reliability. 2: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction to air (i.e., TA, TJ, JA). Exceeding the maximum allowable power dissipation may cause the device operating junction temperature to exceed the maximum +165°C rating. Sustained junction temperatures above +165°C can impact the device reliability. † Notice: Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. Exposure to maxi- mum rating conditions for extended periods may affect device reliability. AC/DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted: TJ = -40°C to +150°C; typical values are for +25°C, VDD = 13.5V, CVBOOT = 4.7 µF, CVREG =4.7 µF, CCP = 220 nF. Parameter Sym. Min. Typ. Max. Units Conditions POWER SUPPLY INPUT Input Operating Voltage VDD 4.5 — 40 V VREG active 6.0 — 29.0 Driver output active Input Supply Current (MCP8021) ISUP — 5 15 µA Sleep mode, TJ = +25°C — 180 330 Standby, OE = 0V — 500 — Active, VDD > 13, 5V, OE > VDIG_HI_TH — 1200 — Active, VDD = 6V, TJ = +25°C Input Supply Current (MCP8022) ISUP — 5 15 µA Sleep mode, TJ =+25°C — 200 350 Standby, OPAMP = 1, OE = 0V — 800 1300 Standby, OPAMP = 0, OE = 0V — 1000 — Active, VDD > 13, 5V, OE > VDIG_HI_TH — 1500 — Active, OE > VDIG_HI_TH, VDD =7V, TJ = +25°C Note 1: Limits based on design, simulation or characterization. Not production tested. |
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