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VNF1048F データシート(PDF) 7 Page - STMicroelectronics |
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VNF1048F データシート(HTML) 7 Page - STMicroelectronics |
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7 / 49 page ![]() Symbol Parameter Test conditions Min. Typ. Max. Unit TTSD_HYS Junction temperature thermal shutdown hysteresis 15 °C TJ_ADC_CONV Junction temperature ADC full scale range resolution TJ_ADC[9:0] = (TJ + 72) * 3 0 1023 TJ_ADC_RATE Junction temperature ADC sample rate 10 kSamples/s Table 10. ST-SPI timings specification Symbol Parameter Test conditions Min. Typ. Max. Unit fC SPI clock frequency 8 MHz tWHCH CSN low timeout VSPI = 3.3 V, ext RPROT < 1 kΩ 30 70 ms tWDTB Watchdog toggle bit timeout.WD_TIME configuration: 00 -10% 50 +10% ms 01 100 10 150 11 200 tSTBY_OUT Minimum time during which CSN must be toggled low to go out of STDBY mode 20 100 µs Table 11. Charge pump specification Symbol Parameter Test conditions Min. Typ. Max. Unit VCP_6V Charge pump output voltage VS = 6V VS + 7 VS + 11 V VCP_10V Charge pump output voltage VS > 10 V VS + 13.5 VS + 14.5 VS + 15.5 V VCP_LOW_H Charge pump output undervoltage high threshold Ramp up on VCP VS + 5.5 VS + 6 VS + 6.5 V VCP_LOW_L Charge pump output undervoltage low threshold Ramp down on VCP VS + 5.1 VS + 5.6 VS + 6.2 V VCP_LOW_hyst Charge pump output undervoltage hysteresis 0.4 V fCP Charge pump frequency -5% 400 +5% kHz tCP_RISE Charge pump low (CP_LOW diagnostic) rising edge filtering time -5% 60 +5% µs tCP_FALL Charge pump low (CP_LOW diagnostic) falling edge filtering time -10% 2.3 +10% µs Table 12. External FET gate driver specification Symbol Parameter Test conditions Min. Typ. Max. Unit VGSON_6V Gate-On voltage VS = 6 V, IG = 50 µA 6 V VGSON_10V Gate-On voltage VS > 10 V, IG = 50 µA 12 15 V VGSOFF Gate-Off voltage 0.5 V VGSMAX Maximum gate voltage (internally limited) 20 V tON Gate turn-on VGS = 0.5 V to VGS = 10 V CGATE = 80 nF 4 µs tOFF Gate turn-off Full VGS to VGS < 0.5, CGATE = 80 nF 2.6 µs VNF1048F Electrical specification DS13084 - Rev 8 page 7/49 |
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