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L99DZ81EP データシート(PDF) 21 Page - STMicroelectronics |
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L99DZ81EP データシート(HTML) 21 Page - STMicroelectronics |
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21 / 62 page ![]() DocID023145 Rev 2 21/62 L99DZ81EP Electrical specifications 61 VDSHxrSW Switching Voltage (VS -VSH) between current mode and switch mode (rising) VS = 13.5 V 1.5 V VTDSHxf (2) Trigger Voltage to sample the VGSH for switching between switch mode and current mode (falling) VS = 13.5 V; VGHx =4V 1.5 V VTGSHxacc (2) Sampled trigger voltage accuracy VS = 13.5 V; VSHx =0 1 V t0GHxr Rise time (switch mode) VS = 13.5 V; VSHx =0; RG =0 ; CG =2.7 nF 45 ns t0GHxf Fall time (switch mode) VS = 13.5 V; VSHx =0; RG =0 ; CG =2.7 nF 85 ns t0GLxr Rise time VS = 13.5 V; VSLx =0; RG =0 ; CG =2.7 nF 45 ns t0GLxf Fall time VS = 13.5 V; VSLx =0; RG =0 ; CG =2.7 nF 85 ns tCCP Programmable cross-current protection time 0.1 5 µs fPWMH PWMH switching frequency(1) VS = 13.5 V; VSLx =0; RG =0 ; CG =2.7 nF; PWMH - duty cycle = 50 % 50 kHz 1. Without cross-current protection time tCCP 2. Parameter not tested, typical value validated by characterization. Table 16. Gate drivers for the external Power-MOS switching times Symbol Parameter Test condition Min. Typ. Max. Unit |
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