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NCV8461 データシート(PDF) 3 Page - ON Semiconductor

部品番号 NCV8461
部品情報  Self Protected High Side Driver
PDF  10 Pages
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メーカー  ONSEMI [ON Semiconductor]
ホームページ  http://www.onsemi.com
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NCV8461 データシート(HTML) 3 Page - ON Semiconductor

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Table 1. MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Min
Max
DC Supply Voltage (Note 1)
VD
−16
40
V
Peak Transient Input Voltage (Note 1)
(Load Dump 38 V, VD = 14 V, ISO7637−2 pulse5)
Vpeak
52
V
Input Voltage
Vin
−10
16
V
Input Current
Iin
−5
5
mA
Output Current (Note 1)
Iout
Internally Limited
A
Status Current
Istatus
−5
5
mA
Power Dissipation Tc = 25
°C (Note 1)
Ptot
1.5
W
Electrostatic Discharge (Note 1)
(HBM Model 100 pF / 1500
W)
Input
All Other Pins
±1.5
±5
DC
kV
kV
Single Pulse Inductive Load Switching Energy (Note 1)
VD = 13.5 V; IL = 0.5 A, TJstart = 150°C
EAS
300
mJ
Operating Junction Temperature
TJ
−40
+150
°C
Storage Temperature
Tstorage
−55
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Not subjected to production testing
Table 2. THERMAL RESISTANCE RATINGS
Parameter
Symbol
Max. Value
Units
Thermal Resistance (Note 2)
Junction−to−Soldering Point
Junction−to−Ambient (6 cm square pad size, FR−4, 2 oz Cu)
RthJS
RthJA
31
84
°C/W
2. Reverse Output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. See spec table and
page 6 for further reverse battery information.



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