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STM32L100C6 データシート(PDF) 53 Page - STMicroelectronics |
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STM32L100C6 データシート(HTML) 53 Page - STMicroelectronics |
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53 / 103 page  DocID024295 Rev 5 53/103 STM32L100C6 STM32L100R8/RB Electrical characteristics 90 Table 20. Current consumption in Low power sleep mode Symbol Parameter Conditions Typ Max (1) 1. Guaranteed by characterization results, unless otherwise specified. Unit IDD (LP Sleep) Supply current in Low power sleep mode All peripherals OFF, VDD from 1.8 V to 3.6 V MSI clock, 65 kHz fHCLK = 32 kHz Flash OFF TA = -40 °C to 25 °C 4.4 - µA MSI clock, 65 kHz fHCLK = 32 kHz Flash ON TA = -40 °C to 25 °C 17.5 25 TA = 85 °C 22 27 MSI clock, 65 kHz fHCLK = 65 kHz, Flash ON TA = -40 °C to 25 °C 18 26 TA = 85 °C 23 28 MSI clock, 131 kHz fHCLK = 131 kHz, Flash ON TA = -40 °C to 25 °C 22 30 TA = 55 °C 24 32 TA = 85 °C 26 34 TIM9 and USART1 enabled, Flash ON, VDD from 1.8 V to 3.6 V MSI clock, 65 kHz fHCLK = 32 kHz TA = -40 °C to 25 °C 17.5 25 TA = 85 °C 22 27 MSI clock, 65 kHz fHCLK = 65 kHz TA = -40 °C to 25 °C 18 26 TA = 85 °C 23 28 MSI clock, 131 kHz fHCLK = 131 kHz TA = -40 °C to 25 °C 22 30 TA = 55 °C 24 32 TA = 85 °C 26 34 IDD Max (LP Sleep) Max allowed current in Low power Sleep mode VDD from 1.8 V to 3.6 V -- - 200 |
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