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STM32L100C6 データシート(PDF) 69 Page - STMicroelectronics |
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STM32L100C6 データシート(HTML) 69 Page - STMicroelectronics |
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69 / 103 page  DocID024295 Rev 5 69/103 STM32L100C6 STM32L100R8/RB Electrical characteristics 90 To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application is executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with IEC 61967-2 standard which specifies the test board and the pin loading. 6.3.11 Electrical sensitivity characteristics Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the JESD22-A114/C101 standard. Table 37. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. frequency range Unit 4 MHz voltage Range 3 16 MHz voltage Range 2 32 MHz voltage Range 1 SEMI Peak level VDD = 3.3 V, TA = 25 °C, LQFP100 package compliant with IEC 61967-2 0.1 to 30 MHz 3 -6 -5 dBµV 30 to 130 MHz 18 4 -7 130 MHz to 1GHz 15 5 -7 SAE EMI Level 2.5 2 1 - Table 38. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA = +25 °C, conforming to JESD22-A114 All 2 2000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA = +25 °C, conforming to JESD22-C101 All III 500 V 1. Guaranteed by characterization results. |
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