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STM32L100C6 データシート(PDF) 48 Page - STMicroelectronics |
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STM32L100C6 データシート(HTML) 48 Page - STMicroelectronics |
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48 / 103 page ![]() Electrical characteristics STM32L100C6 STM32L100R8/RB 48/103 DocID024295 Rev 5 6.3.4 Supply current characteristics The current consumption is a function of several parameters and factors such as the operating voltage, ambient temperature, I/O pin loading, device software configuration, operating frequencies, I/O pin switching rate, program location in memory and executed binary code. The current consumption is measured as described in Figure 10: Current consumption measurement scheme. All Run-mode current consumption measurements given in this section are performed with a reduced code that gives a consumption equivalent to Dhrystone 2.1 code, unless otherwise specified. The current consumption values are derived from the tests performed under ambient temperature TA=25°C and VDD supply voltage conditions summarized in Table 12: General operating conditions, unless otherwise specified. Maximum current consumption The MCU is placed under the following conditions: • VDD = 3.6 V • All I/O pins are in input mode with a static value at VDD or VSS (no load). • All peripherals are disabled except when explicitly mentioned. • The Flash memory access time is adjusted depending on fHCLK frequency and voltage range. • Prefetch and 64-bit access are enabled in configurations with 1 wait state. • When the peripherals are enabled fAPB1 = fAPB2 = fAHB. • When fHCLK > 8 MHz, PLL is ON and PLL inputs are equal to HSI = 8 MHz (if internal clock is used) or HSE = 8 MHz (if HSE bypass mode is used). |
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