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GD25LB64CSIS データシート(PDF) 59 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LB64CSIS データシート(HTML) 59 Page - GigaDevice Semiconductor (Beijing) Inc. |
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59 / 70 page  1.8V Uniform Sector Dual and Quad Serial Flash GD25LB64C 59 8. ELECTRICAL CHARACTERISTICS 8.1 POWER-ON TIMING Figure40. Power-on Timing Vcc(max) Vcc(min) VWI tVSL Chip Selection is not allowed Device is fully accessible Time Table6. Power-Up Timing and Write Inhibit Threshold Symbol Parameter Min Max Unit tVSL VCC (min) To CS# Low 1.8 ms VWI Write Inhibit Voltage 1 1.4 V 8.2 INITIAL DELIVERY STATE The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register contains 00H (all Status Register bits are 0). 8.3 ABSOLUTE MAXIMUM RATINGS Parameter Value Unit Ambient Operating Temperature -40 to 85 ℃ Storage Temperature -65 to 150 ℃ Transient Input/Output Voltage (note: overshoot) -2.0 to VCC+2.0 V Applied Input/Output Voltage -0.6 to VCC+0.4 V VCC -0.6 to 2.5 V Figure41. Input Test Waveform and Measurement Level Vss 20ns Maximum Negative Overshoot Waveform Maximum Positive Overshoot Waveform 20ns 20ns Vss-2.0V Vcc 20ns 20ns 20ns Vcc + 2.0V |
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