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VNF1048F データシート(PDF) 9 Page - STMicroelectronics |
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VNF1048F データシート(HTML) 9 Page - STMicroelectronics |
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9 / 52 page ![]() ID Symbol Parameter Test conditions Min. Typ. Max. Unit CGATE = 80 nF 5.7 tOFF Gate turn off Full VGS to VGS < 0.5 CGATE = 80 nF 2.6 µs 5.8 VGS_UVLO_6V Gate under voltage lockout VS = 6 V 5 V 5.9 VGS_UVLO_10V Gate under voltage lockout VS >10 V 8.5 V 5.10 VG_UVLO_BLK Gate under voltage lockout blanking Enable at Charge Pump startup if Ext FET turn-on is required, and applied after CP_LOW expiration (falling edge) - 6 % 100 + 6 % µs 5.11 VG_UVLO_DEGLITCH Gate under voltage lockout de-glitch filtering time - 15 % 8 + 15 % µs 5.12 QGMAX Maximum gate charge VGS = 10 V 800 nC Table 13. Current sense amplifier with integrated ADC ID Symbol Parameter Test conditions Min. Typ. Max. Unit 6.1 VSENSE_CM Common-mode input voltage range 0 70 V 6.2 VSENSE_FSR Differential input voltage full scale range 0 160 mV 6.3 I_SENSE_P CSA positive input current 400 μA 6.4 I_SENSE_N CSA negative input current 560 μA 6.5 VSENSE_ADC_CONV Current Sense ADC Full scale range resolution VSENSE_ADC[12:0] = MIN((VSENSE/160 * 8192), 8191) 0 8191 6.6 VSENSE_REFRESH Current Sense ADC sample rate 2.4 kSample/s 6.7 VSENSE_ACC_6mV Digital Current Sense Accuracy 6 mV < VSENSE_DIFF < 10 mV -10 +10 % 6.8 VSENSE_ACC_10mV VSENSE_DIFF = 10 mV -5 +5 % 6.9 VSENSE_ACC_20mV VSENSE_DIFF > 20 mV -3 +3 % 6.10 VSENSE_ACC_1.8mV 1.8 mV < VSENSE_DIFF < 6 mV -17 +17 % Table 14. External FET VDS Protection ID Symbol Parameter Test conditions Min. Typ. Max. Unit 7.1 VDS_THRS_RANGE VDS monitor threshold range 31 steps adjustable through SPI 300 1800 mV 7.2 VDS_THRS_STEP VDS monitor threshold step 50 mV 7.3 VDS_THRS_0 VDS monitor thresholds 300 mV VDS_THRS_ 1 350 VDS_THRS_2 400 VDS_THRS_3 450 VDS_THRS_ 4 500 VDS_THRS_ 5 550 VNF1048F Main electrical characteristics DS13084 - Rev 6 page 9/52 |
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