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M69KB128AA データシート(PDF) 15 Page - STMicroelectronics

部品番号 M69KB128AA
部品情報  128 Mbit (8Mb x16) 1.8V Supply, Burst PSRAM
PDF  68 Pages
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メーカー  STMICROELECTRONICS [STMicroelectronics]
ホームページ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

M69KB128AA データシート(HTML) 15 Page - STMicroelectronics

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M69KB128AA
5 Standard asynchronous operating modes
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5
Standard asynchronous operating modes
The M69KB128AA supports Asynchronous Read and Write modes (Random Read, Page
Read, Asynchronous Write).
The device is put in Asynchronous mode by setting bit 15 (BCR15) of the BCR to ‘1’. The Page
mode is controlled by the Refresh Configuration Register (bit RCR7).
During asynchronous operations, the WAIT signal should be ignored and the Clock input signal
K should be held Low, VIL.
Refer to Table 3: Standard Asynchronous Operating Modes for a detailed description of
asynchronous operating modes.
5.1
Asynchronous Read and Write modes
At Power-Up, the device defaults to Asynchronous Random Read mode (bit BCR15 set to ‘1’).
This mode uses the industry standard control bus (E, G, W, LB, UB). Read operations are
initiated by bringing E and G Low, VIL, while keeping W High, VIH. Valid data will be gated
through the output buffers after the specific access time tELQV has elapsed.
Write operations occur when E and W are Low. During Asynchronous Random Write
operations, the G signal is ‘don't care’ and W will override G. The data to be written is latched
on the rising edge of E, W, LB or UB (whichever occurs first). The write operation is terminated
by de-asserting E, W, LB or UB.
The L input can either be used to latch the address or kept Low, VIL, during the entire read/write
operation.
See Figure 14 and Figure 15, and Table 17 for details on Asynchronous Read AC waveforms
and characteristics and Figure 18, Figure 19, Figure 20, and Figure 19 for details of
Asynchronous Write AC waveforms and characteristics.
5.2
Asynchronous Page Read mode
Asynchronous Page Read mode is enabled by setting RCR7 to ‘1’. The Latch Enable, L, and
the Chip enable E must be held Low, VIL during Asynchronous Page Read operations.
A Page of data is internally read. A memory page may consist of 4, 8 or 16 Words. During a 4-
Word page access, all the address bits except A0 to A1 should be fixed. During a 8-Word and
16-Word page access, all address bits are fixed except A0 to A2 and A0 to A3, respectively
(see Table 2: Page Mode Characteristics).
The first read operation within the Page has the normal access time (tAVQV), subsequent reads
within the same Page have much shorter access times (tAVQV1). If the Page changes then the
normal, longer timings apply again.
The Page mode is not available for write operations.
See Figure 16 and Table 17 for details of the Asynchronous Page Read timing requirements.



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