 |
データシートサーチシステム |
|
|
データシートサーチシステム |
|
KAI-08052 データシート(PDF) 7 Page - ON Semiconductor |
|
|
|||||||||||||||||||||||||||||
KAI-08052 データシート(HTML) 7 Page - ON Semiconductor |
|
|
7 / 33 page  KAI−08052 www.onsemi.com 7 IMAGING PERFORMANCE Table 4. TYPICAL OPERATION CONDITIONS Unless otherwise noted, the Imaging Performance Specifications are measured using the following conditions. Description Condition Notes Light Source Continuous red, green and blue LED illumination For monochrome sensor, only green LED used. Operation Nominal operating voltages and timing Table 5. SPECIFICATIONS All Configurations Description Symbol Min. Nom. Max. Units Sampling Plan Temperature Tested At (5C) Notes Dark Field Global Non−Uniformity DSNU − − 2.0 mVpp Die 27, 40 Bright Field Global Non−Uniformity − 2.0 5.0 %rms Die 27, 40 1 Bright Field Global Peak to Peak Non−Uniformity PRNU − 5.0 15.0 %pp Die 27, 40 1 Bright Field Center Non−Uniformity − 1.0 2.0 %rms Die 27, 40 1 Maximum Photoresponse Nonlinearity NL − 2 − % Design 2 Maximum Gain Difference Between Outputs DG − 10 − % Design 2 Maximum Signal Error due to Nonlinearity Differences DNL − 1 − % Design 2 Horizontal CCD Charge Capacity HNe − 55 − ke− Design Vertical CCD Charge Capacity VNe − 40 − ke− Design Photodiode Charge Capacity PNe − 20 − ke− Die 27, 40 3 Horizontal CCD Charge Transfer Efficiency HCTE 0.999995 0.999999 − Die Vertical CCD Charge Transfer Efficiency VCTE 0.999995 0.999999 − Die Photodiode Dark Current Ipd − 1 70 e/p/s Die 40 Vertical CCD Dark Current Ivd − 70 300 e/p/s Die 40 Image Lag Lag − − 10 e− Design Antiblooming Factor Xab 300 − − Design Vertical Smear Smr − −100 − dB Design Read Noise ne−T − 10 − e−rms Design 4 Dynamic Range DR − 66 − dB Design 4, 5 Output Amplifier DC Offset Vodc − 9.1 − V Die 27, 40 Output Amplifier Bandwidth f−3db − 250 − MHz Die 6 Output Amplifier Impedance ROUT − 127 − W Die 27, 40 Output Amplifier Sensitivity DV/DN − 35 − mV/e− Design 1. Per color 2. Value is over the range of 10% to 90% of photodiode saturation. 3. The operating value of the substrate voltage, VAB, will be marked on the shipping container for each device. The value of VAB is set such that the photodiode charge capacity is 800 mV. 4. At 40 MHz 5. Uses 20LOG (PNe/ ne−T) 6. Assumes 5 pF load. |
|
リンク URL |
| ALLDATASHEETはお客様のビジネスに役立ちますか？ [ DONATE ] |
Alldatasheetは | 広告 | お問い合わせ | プライバシーポリシー | データシートへのリンク | リンク交換 | メーカーリスト All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
Japanese ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
