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GD25LB64C データシート(PDF) 21 Page - GigaDevice Semiconductor (Beijing) Inc. |
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GD25LB64C データシート(HTML) 21 Page - GigaDevice Semiconductor (Beijing) Inc. |
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21 / 70 page ![]() 1.8V Uniform Sector Dual and Quad Serial Flash GD25LB64C 21 7.5 Write Status Register (WRSR) (01H) The Write Status Register (WRSR) command allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) command must previously have been executed. After the Write Enable (WREN) command has been decoded and executed, the device sets the Write Enable Latch (WEL). The Write Status Register (WRSR) command has no effect on S15, S10, S9, S1 and S0 of the Status Register. CS# must be driven high after the eighth or sixteen bit of the data byte has been latched in. If not, the Write Status Register (WRSR) command is not executed. If CS# is driven high after eighth bit of the data byte, the CMP bit will be cleared to 0 in either SPI or QPI mode. As soon as CS# is driven high, the self-timed Write Status Register cycle (whose duration is tW) is initiated. While the Write Status Register cycle is in progress, the Status Register may still be read to check the value of the Write In Progress (WIP) bit. The Write In Progress (WIP) bit is 1 during the self-timed Write Status Register cycle, and is 0 when it is completed. When the cycle is completed, the Write Enable Latch (WEL) is reset. The Write Status Register (WRSR) command allows the user to change the values of the Block Protect (BP4, BP3, BP2, BP1, and BP0) bits, to define the size of the area that is to be treated as read-only, as defined in Table1. Figure5. Write Status Register Sequence Diagram Command 0 1 2 3 4 5 6 7 01H CS# SCLK SI SO High-Z 8 9 10 11 12 13 14 15 MSB 7 6 5 4 3 2 1 0 Status Register in 16 17 18 19 20 21 22 23 15 14 13 12 11 10 9 8 Figure5a. Write Status Register Sequence Diagram (QPI) CS# SCLK IO0 IO1 IO2 IO3 0 1 2 3 4 5 Command 01H 4 12 0 8 5 13 1 9 14 10 7 3 15 11 Status Register in 6 2 |
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