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SPC58EN80C3RMSBY データシート(PDF) 59 Page - STMicroelectronics |
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SPC58EN80C3RMSBY データシート(HTML) 59 Page - STMicroelectronics |
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59 / 158 page ![]() DS11734 Rev 6 59/158 SPC584Nx, SPC58ENx, SPC58NNx Electrical characteristics 71 — CC D Oversampling ratio Internal modulator 24 — 1024 — External modulator — — 256 — RESOLUTION CC D S/D register resolution(6) 2’s complement notation 16 bit GAIN SR D ADC gain Defined via ADC_SD[PGA] register. Only integer powers of 2 are valid gain values. 1— 16 — |δGAIN|(7) CC C Absolute value of the ADC gain error ,(8)(9) Before calibration (applies to gain setting = 1) —— 1 % D After calibration, ΔVDD_HV_ADR_D < 5% ΔVDD_HV_ADV_D < 10% ΔTJ < 50 °C —— 5 mV After calibration, ΔVDD_HV_ADR_D < 5% ΔVDD_HV_ADV_D < 10% ΔTJ < 100 °C —— 7.5 After calibration, ΔVDD_HV_ADR_D < 5% ΔVDD_HV_ADV_D < 10% ΔTJ < 150 °C —— 10 After calibration, ΔVDD_HV_ADR_D < 5% ΔVDD_HV_ADV_D < 10% ΔTJ < 165 °C — — 12.5 VOFFSET CC P Conversion offset(8),(9),(10) Before calibration (applies to all gain settings – 1, 2, 4, 8, 16) — 10* (1+1/gain) 65 mV D After calibration, ΔVDD_HV_ADR_D < 10% ΔTJ < 50 °C —— 5 mV After calibration, ΔVDD_HV_ADR_D < 10% ΔTJ < 100 °C —— 7.5 After calibration, ΔVDD_HV_ADR_D < 10% ΔTJ < 150 °C 0.5 — 19 Table 27. SDn ADC electrical specification (continued) Symbol C Parameter Conditions Value Unit Min Typ Max |
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