SPC58EN80C3RMSBY datasheet(91/158 Pages) STMICROELECTRONICS

91 / 158 page

DS11734 Rev 6

91/158

SPC584Nx, SPC58ENx, SPC58NNx

Electrical characteristics

terr

Erase rate(8)

4.8

7.2

9.6

6.4

—

s/M

tprfm

Program rate Factory Mode(8)

1.12

1.4

1.6

—

s/M

terfm

Erase rate Factory Mode(8)

4.0

5.2

5.8

—

s/M

tffprogram

Full flash programming time(9) 12.0

17.8

22.0

15.4

—

tfferase

Full flash erasing time(9)

25.0

40.0

50.0

40.0

—

tESRT

Erase suspend request

rate(10)

200

—

— µs

tPSRT

Program suspend request

rate(10)

—

— µs

tAMRT

Array Integrity Check - Margin

Read suspend request rate

—

— µs

tPSUS

Program suspend latency(11)

——

—

µs

tESUS

Erase suspend latency(11)

——

—

µs

tAIC0S

Array Integrity Check (6.0 MB,

sequential)(12)

—

— ms

tAIC256KS

Array Integrity Check (256

KB, sequential)(12)

1.5

—

— ms

tAIC0P

Array Integrity Check (6.0 MB,

proprietary)(12)

4.0

—

tMR0S

Margin Read (6.0 MB,

sequential)(12)

120

—

— ms

tMR256KS

Margin Read (256 KB,

sequential)(12)

4.0

—

— ms

1. Characteristics are valid both for Data Flash and Code Flash, unless specified in the characteristics column.

2. Actual hardware operation times; this does not include software overhead.

3. Typical program and erase times assume nominal supply values and operation at 25 °C.

4. Typical End of Life program and erase times represent the median performance and assume nominal supply values.

Typical End of Life program and erase values may be used for throughput calculations. These values are characteristic, but

not tested.

5. Lifetime maximum program & erase times apply across the voltages and temperatures and occur after the specified

number of program/erase cycles. These maximum values are characterized but not tested or guaranteed.

6. Initial factory condition: < 100 program/erase cycles, 25 °C typical junction temperature and nominal (± 5%) supply

voltages.

7. Initial maximum “All temp” program and erase times provide guidance for time-out limits used in the factory and apply for

less than or equal to 100 program or erase cycles, –40 °C < TJ < 150 °C junction temperature and nominal (± 5%) supply

voltages.

Table 44. Flash memory program and erase specifications (continued)

Symbol

Characteristics(1)(2)

Value

Unit

Typ(3) C

Initial max

Typical

end of

life(4)

Lifetime

max(5)

25 °C

(6)

All

temp

(7)

< 1 K

cycles

< 250 K

cycles

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