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SPC58EN80C3RMSBY データシート(PDF) 27 Page - STMicroelectronics |
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SPC58EN80C3RMSBY データシート(HTML) 27 Page - STMicroelectronics |
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27 / 158 page ![]() DS11734 Rev 6 27/158 SPC584Nx, SPC58ENx, SPC58NNx Electrical characteristics 37 3.8 I/O pad specification The following table describes the different pad type configurations. Note: Each I/O pin on the device supports specific drive configurations. See the signal description table in the device reference manual for the available drive configurations for each I/O pin. PMC_DIG_VSIO register has to be configured to select the voltage level (3.3 V or 5.0 V) for each IO segment. 3.8.1 I/O input DC characteristics The following table provides input DC electrical characteristics, as described in Figure 3. Figure 3. I/O input electrical characteristics In the following table, in case of current injection pulses on one pad under the conditions and limits described in IINJ2 parameter in Section 3.3: Operating conditions, other pads of Table 10. I/O pad specification descriptions Pad type Description Weak configuration Provides a good compromise between transition time and low electromagnetic emission. Medium configuration Provides transition fast enough for the serial communication channels with controlled current to reduce electromagnetic emission. Strong configuration Provides fast transition speed; used for fast interface. Very strong configuration Provides maximum speed and controlled symmetric behavior for rise and fall transition. Used for fast interface including Ethernet and FlexRay interfaces requiring fine control of rising/falling edge jitter. Differential configuration A few pads provide differential capability providing very fast interface together with good EMC performances. Input only pads These low input leakage pads are associated with the ADC channels. VIL VIN VIH VINTERNAL VDD VHYS (SIUL register) |
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