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SPC58EN80C3RMSBY データシート(PDF) 19 Page - STMicroelectronics |
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SPC58EN80C3RMSBY データシート(HTML) 19 Page - STMicroelectronics |
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19 / 158 page ![]() DS11734 Rev 6 19/158 SPC584Nx, SPC58ENx, SPC58NNx Electrical characteristics 21 VSS_HV_ADR_D SR P SD ADC ground reference voltage —VSS_HV_ADV V VSS_HV_ADR_D- VSS_HV_ADV SR D VSS_HV_ADR_D differential voltage — –25 — 25 mV VDD_HV_ADR_S SR P SAR ADC reference voltage — 3.0 — 5.5 V VDD_HV_ADR_S- VDD_HV_ADV SR D SAR ADC reference differential voltage — VDD_HV_ADV -10% —25 mV VSS_HV_ADR_S SR P SAR ADC ground reference voltage —VSS_HV_ADV V VSS_HV_ADR_S- VSS_HV_ADV SR D VSS_HV_ADR_S differential voltage — –25 — 25 mV VRAMP_LV SR D Slew rate on core power supply pins VDD_LV VDD_LV_BD —— 20 V/ms VRAMP_HV SR D Slew rate on HV power supply —— — 100 V/ms VIN SR P I/O input voltage range —0 — 5.5 V IINJ1 SR T DC Injection current (per pin) without performance degradation(9) (10) (11) Digital pins and analog pins –3.0 — 3.0 mA IINJ2 SR D Dynamic Injection current (per pin) with performance degradation(11) (12) Digital pins and analog pins –10 — 10 mA 1. The ranges in this table are design targets and actual data may vary in the given range. 2. The maximum number of PRAM wait states has to be configured accordingly to the system clock frequency. Refer to Table 6. Table 5. Operating conditions (continued) Symbol C Parameter Conditions Value(1) Unit Min Typ Max |
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