SPC58EN80C3RMSBY datasheet(77/158 Pages) STMICROELECTRONICS

77 / 158 page

DS11734 Rev 6

77/158

SPC584Nx, SPC58ENx, SPC58NNx

Electrical characteristics

Table 33. MSC/DSPI LVDS transmitter electrical characteristics (1),(2),(3)

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

fDATA

SR D

Data rate

—

Mbps

VOS

CC P

Common mode voltage

—

1.08

—

1.32

ΔVOD|CC P

Differential output voltage swing

(terminated)(4),(5)

—

150

—

400

tTR

CC T

Rise time from -|

ΔVOD(min)| to

ΔVOD(min)|. Fall time from

ΔVOD(min)| to -|ΔVOD(min)|(6)

—

0.8

—

5.8

SR D

External lumped differential load

capacitance(4)

VDD_HV_IO = 4.5 V

—

VDD_HV_IO = 3.0 V

—

ILVDS_TX CC C

Transmitter DC current consumption

Enabled

—

5.0

IPIN_TX

CC D

Transmitter DC current sourced through

output pin

—

1.5

—

4.0

1. This table is applicable to MSC/DSPI LVDS pads used in MSC configuration (SIUL2_MSCR_IO_n.ODC=100).

2. The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case internal

capacitance values given in Figure 12.

3. All MSC and DSPI LVDS pad electrical characteristics are valid from -40 °C to 165 °C.

4. Valid for maximum data rate fDATA. Value given is the capacitance on each terminal of the differential pair, as shown in

Figure 12.

5. Valid for maximum external load CL.

6. The transition time is measured from 10% to 90% of the voltage transition from -|

ΔVOD|(min) to +|ΔVOD|(min).

Table 34. MSC LVDS transmitter electrical characteristics for LFAST pads. (1),(2),(3)

Symbol

Parameter

Conditions

Value

Unit

Min

Typ

Max

fDATA

SR D

Data rate

—

320

Mbps

VOS

CC P

Common mode voltage

—

1.08

—

1.32

ΔVOD|CC P

Differential output voltage swing

(terminated)(4),(5)

—

120

—

400

tTR

CC T

Rise time from -|

ΔVOD(min)| to

ΔVOD(min)|. Fall time from

ΔVOD(min)| to -|ΔVOD(min)|(6)

—0.26

—

1.4

SR D

External lumped differential load

capacitance(4)

VDD_HV_IO = 4.5 V

—

12.0

VDD_HV_IO = 3.0 V

—

8.5

ILVDS_TX CC C

Transmitter DC current consumption

Enabled

—

5.0

IPIN_TX

CC D

Transmitter DC current sourced through

output pin

—1.5

4.0

1. This table is applicable to LFAST LVDS pads used in MSC configuration (SIUL2_MSCR_IO_n.ODC=100).

2. The MSC and DSPI LVDS pad electrical characteristics are based on the application circuit and typical worst case internal

capacitance values given in Figure 12.

SPC58EN80C3RMSBY データシート(PDF) 77 Page - STMicroelectronics

SPC58EN80C3RMSBY データシート(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

データシートダウンロード

リンク URL

SPC58EN80C3RMSBY データシート(PDF) 77 Page - STMicroelectronics

SPC58EN80C3RMSBY データシート(HTML) 77 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 ...More

データシート ダウンロード

リンク URL

データシートダウンロード